Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics

2019 ◽  
Vol 41 (3) ◽  
pp. 349-359
Author(s):  
Hector García ◽  
Helena Castán ◽  
Salvador Dueñas ◽  
Luis Bailón ◽  
Francesca Campabadal ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Irradiation Effects ◽  
High K

2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

2013 ◽  
Vol 534 ◽  
pp. 482-487 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
L. Bailón ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Irradiation Effects ◽  
High K

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

2016 ◽  
Vol 387 ◽  
pp. 274-279 ◽  
Author(s):  
Meng-Chen Tsai ◽  
Min-Hung Lee ◽  
Chin-Lung Kuo ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

In-Line Electrical Metrology for High-K Gate Dielectrics Deposited by Atomic Layer CVD

2003 ◽  
Vol 150 (9) ◽  
pp. F169 ◽  
Author(s):  
H. De Witte ◽  
S. Passefort ◽  
W. Besling ◽  
J. W. H. Maes ◽  
K. Eason ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS Capacitor

2014 ◽  
Vol 778-780 ◽  
pp. 549-552 ◽  
Author(s):  
Jing Hua Xia ◽  
David M. Martin ◽  
Sethu Saveda Suvanam ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Deposition Process ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Layer Deposition ◽  
High K ◽  
Film Characteristics

LaxHfyO nanolaminated thin film deposited using atomic layer deposition process has been studied as a high-K gate dielectric in 4H-SiC MOS capacitors. The electrical and nano-laminated film characteristics were studied with increasing post deposition annealing (PDA) in N2O ambient. The result shows that high quality LaxHfyO nano-laminated thin films with good interface and bulk qualities are fabricated using high PDA temperature.

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

2018 ◽  
Vol 443 ◽  
pp. 421-428 ◽  
Author(s):  
Yu-Shu Lin ◽  
Po-Hsien Cheng ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Functionalization ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

New High-k SrTa2O6 Gate Dielectrics Prepared by Plasma-Enhanced Atomic Layer Chemical Vapor Deposition

2002 ◽  
Vol 41 (Part 2, No. 6B) ◽  
pp. L729-L731 ◽  
Author(s):  
Byung-Gyu Chae ◽  
Won-Jae Lee ◽  
In-Kyu You ◽  
Sang-Ouk Ryu ◽  
Moon-Youn Jung ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
High K

Electrical Properties of Atomic-Layer-Deposited Thin Gadolinium Oxide High-k Gate Dielectrics

2007 ◽  
Vol 154 (10) ◽  
pp. G207 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. García ◽  
A. Gómez ◽  
L. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Gadolinium Oxide ◽  
High K
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