Electrical Properties of Atomic-Layer-Deposited Thin Gadolinium Oxide High-k Gate Dielectrics

2007 ◽  
Vol 154 (10) ◽  
pp. G207 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. García ◽  
A. Gómez ◽  
L. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Gadolinium Oxide ◽  
High K

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Performance Enhancement of Electrospun IGZO-Nanofiber-Based Field-Effect Transistors with High-k Gate Dielectrics through Microwave Annealing and Postcalcination Oxygen Plasma Treatment

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1804 ◽  
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Field Effect ◽  
Oxygen Plasma ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxygen Plasma Treatment ◽  
Calcination Process ◽  
Microwave Annealing ◽  
High K

We investigated the effects of various high-k gate dielectrics as well as microwave annealing (MWA) calcination and a postcalcination oxygen plasma treatment on the electrical properties and stability of electrospun indium gallium zinc oxide (IGZO)-nanofiber (NF)-based field-effect transistors (FETs). We found that the higher the dielectric constant of the gate dielectric, the better the electric field is transferred, resulting in the better performance of the IGZO NF FET. In addition, the MWA-calcined IGZO NF FET was superior to the conventional furnace annealing-calcined device in terms of the electrical properties of the device and the operation of resistor-loaded inverter, and it was proved that the oxygen plasma treatment further improved the performance. The results of the gate bias temperature stress test confirmed that the MWA calcination process and postcalcination oxygen plasma treatment greatly improved the stability of the IGZO NF FET by reducing the number of defects and charge traps. This verified that the MWA calcination process and oxygen plasma treatment effectively remove the organic solvent and impurities that act as charge traps in the chemical analysis of NF using X-ray photoelectron spectroscopy. Furthermore, it was demonstrated through scanning electron microscopy and ultraviolet-visible spectrophotometer that the MWA calcination process and postcalcination oxygen plasma treatment also improve the morphological and optical properties of IGZO NF.

2MeV electron irradiation effects on bulk and interface of atomic layer deposited high-k gate dielectrics on silicon

2013 ◽  
Vol 534 ◽  
pp. 482-487 ◽  
Author(s):  
H. García ◽  
H. Castán ◽  
S. Dueñas ◽  
L. Bailón ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Irradiation Effects ◽  
High K

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

2016 ◽  
Vol 387 ◽  
pp. 274-279 ◽  
Author(s):  
Meng-Chen Tsai ◽  
Min-Hung Lee ◽  
Chin-Lung Kuo ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Structural and electrical properties of neodymium oxide high-k gate dielectrics

2006 ◽  
Vol 89 (23) ◽  
pp. 232908 ◽  
Author(s):  
Tung-Ming Pan ◽  
Jian-Der Lee ◽  
Wei-Hao Shu ◽  
Tsung-Te Chen
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Neodymium Oxide ◽  
High K ◽  
Structural And Electrical Properties

Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics

2015 ◽  
Vol 324 ◽  
pp. 662-668 ◽  
Author(s):  
Jhih-Jie Huang ◽  
Yi-Jen Tsai ◽  
Meng-Chen Tsai ◽  
Li-Tien Huang ◽  
Min-Hung Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectrics ◽  
Depth Profiles ◽  
High K
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