Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

2009 ◽  
Vol 27 (1) ◽  
pp. 389 ◽  
Author(s):  
S. Dueñas ◽  
H. Castán ◽  
H. Garcia ◽  
A. Gómez ◽  
L. Bailón ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Hafnium Oxide ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Ozone Precursors ◽  
Layer Deposition ◽  
High K

Electrical properties of 0.5 nm thick Hf-silicate top‐layer∕HfO2 gate dielectrics by atomic layer deposition

2005 ◽  
Vol 86 (22) ◽  
pp. 222904 ◽  
Author(s):  
Satoshi Kamiyama ◽  
Takayoshi Miura ◽  
Yasuo Nara ◽  
Tsunetoshi Arikado
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Process–property relationship in high-k ALD SrTiO3 and BaTiO3: a review

2017 ◽  
Vol 5 (32) ◽  
pp. 8000-8013 ◽  
Author(s):  
J. H. Shim ◽  
H. J. Choi ◽  
Y. Kim ◽  
J. Torgersen ◽  
J. An ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Property Relationship ◽  
Layer Deposition ◽  
High K ◽  
Process Property

This review addresses recent approaches for atomic layer deposition (ALD) that are closely related to the electrical properties of ultrathin SrTiO3 and BaTiO3 films.

Atomic layer deposition of sub-10 nm high-K gate dielectrics on top-gated MoS2 transistors without surface functionalization

2018 ◽  
Vol 443 ◽  
pp. 421-428 ◽  
Author(s):  
Yu-Shu Lin ◽  
Po-Hsien Cheng ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Functionalization ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

Characterization and electrical properties of high-k GdScO3 thin films grown by atomic layer deposition

2007 ◽  
Vol 88 (4) ◽  
pp. 633-637 ◽  
Author(s):  
P. Myllymäki ◽  
M. Roeckerath ◽  
M. Putkonen ◽  
S. Lenk ◽  
J. Schubert ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K

Structural and electrical properties of Ge-doped ZrO2 thin films grown by atomic layer deposition for high-k dielectrics

2018 ◽  
Vol 53 (21) ◽  
pp. 15237-15245 ◽  
Author(s):  
Bo-Eun Park ◽  
Yujin Lee ◽  
Il-Kwon Oh ◽  
Wontae Noh ◽  
Satoko Gatineau ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K ◽  
Structural And Electrical Properties
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