Low Frequency Noise Analysis of Top-Gate MgZnO Thin-Film Transistor with High-κ ZrO2 Gate Insulator

2011 ◽  
Vol 14 (9) ◽  
pp. H385 ◽  
Author(s):  
Hsien-Chin Chiu ◽  
Hsiang-Chun Wang ◽  
Che-Kai Lin ◽  
Chau-Wei Chiu ◽  
Jeffrey S. Fu ◽  
...  
2001 ◽  
Vol 383 (1-2) ◽  
pp. 303-306 ◽  
Author(s):  
A. Mercha ◽  
L. Pichon ◽  
R. Carin ◽  
K. Mourgues ◽  
O. Bonnaud

2011 ◽  
Vol 378-379 ◽  
pp. 642-645
Author(s):  
Kyunghwan Lee ◽  
Younghwan Son ◽  
Jaeho Lee ◽  
Jae Hong Lee ◽  
Seunghyun Jang ◽  
...  

Density of states in the channel bulk area of a-Si:H thin-film transistors (TFTs) was extracted by using low-frequency noise analysis. The drain current noise power spectral density shows 1/ƒγ behavior at relatively high frequencies (ƒ > 1 kHz), which is due to the exponential distribution of tail states. For the analysis, the modified number fluctuation model which is correlated with mobility fluctuation was used. From the relationship (γ=1- kT/Et ) between exponent γ and the slope of exponential distribution Et of band tail states, the distribution of the band tail near conduction band was extracted.


2008 ◽  
Vol 104 (12) ◽  
pp. 124502 ◽  
Author(s):  
Lin Ke ◽  
Surani Bin Dolmanan ◽  
Lu Shen ◽  
Chellappan Vijila ◽  
Soo Jin Chua ◽  
...  

2017 ◽  
Vol 66 (23) ◽  
pp. 237101
Author(s):  
Liu Yuan ◽  
He Hong-Yu ◽  
Chen Rong-Sheng ◽  
Li Bin ◽  
En Yun-Fei ◽  
...  

2010 ◽  
Vol 31 (10) ◽  
pp. 1128-1130 ◽  
Author(s):  
Sanghun Jeon ◽  
Sun Il Kim ◽  
Sungho Park ◽  
Ihun Song ◽  
Jaechul Park ◽  
...  

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CF04 ◽  
Author(s):  
Kwang-Seok Jeong ◽  
Ho-Jin Yun ◽  
Yu-Mi Kim ◽  
Seung-Dong Yang ◽  
Sang-Youl Lee ◽  
...  

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