scholarly journals Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor

2021 ◽  
Vol 0 (0) ◽  
pp. 0-0
Author(s):  
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2009 ◽  
Vol 30 (5) ◽  
pp. 505-507 ◽  
Author(s):  
Jeong-Min Lee ◽  
Woo-Seok Cheong ◽  
Chi-Sun Hwang ◽  
In-Tak Cho ◽  
Hyuck-In Kwon ◽  
...  

2010 ◽  
Vol 97 (12) ◽  
pp. 122104 ◽  
Author(s):  
Jae Chul Park ◽  
Sang Wook Kim ◽  
Chang Jung Kim ◽  
Sungchul Kim ◽  
Dae Hwan Kim ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (17) ◽  
pp. 9902-9906 ◽  
Author(s):  
Kuan-Yu Chen ◽  
Chih-Chiang Yang ◽  
Chun-Yuan Huang ◽  
Yan-Kuin Su

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method.


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