scholarly journals Low-frequency noise in hydrogenated amorphous silicon thin film transistor

2017 ◽  
Vol 66 (23) ◽  
pp. 237101
Author(s):  
Liu Yuan ◽  
He Hong-Yu ◽  
Chen Rong-Sheng ◽  
Li Bin ◽  
En Yun-Fei ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Temperature dependence of conduction and low frequency noise characteristics in hydrogenated amorphous silicon thin film transistors

2019 ◽  
Vol 33 (02) ◽  
pp. 1950009
Author(s):  
Kai Zhong ◽  
Yuan Liu ◽  
Shu-Ting Cai ◽  
Xiao-Ming Xiong
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
Hydrogenated Amorphous

The transfer and low frequency noise characteristics of hydrogenated amorphous silicon thin film transistors (a-Si:H TFTs) were measured in the temperature range of 230–430 K. The variation of threshold voltage, field effect mobility and sub-threshold swing with increasing temperatures were then extracted and analyzed. Moreover, the shifts of low frequency noise in the a-Si:H TFT under various temperatures are reported for the first time. The variation of flatband voltage noise power spectral density with temperature is also calculated and discussed.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Double Layer ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Hydrogenated Amorphous

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

Sign in / Sign up

Export Citation Format

Share Document