Ge-Based Nonvolatile Memory Formed on Si Substrate with Ge-Stabilized Tetragonal ZrO2 as Charge Trapping Layer

2011 ◽  
Vol 158 (4) ◽  
pp. H410 ◽  
Author(s):  
Yung-Hsien Wu ◽  
Jia-Rong Wu ◽  
Min-Lin Wu ◽  
Lun-Lun Chen ◽  
Chia-Chun Lin
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Tetragonal Zro2 ◽  
Si Substrate

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Tetragonal ZrO2-Gated Ge MOS Capacitors Fabricated on Si Substrate

2019 ◽  
Vol 28 (5) ◽  
pp. 153-160 ◽  
Author(s):  
Min-Lin Wu ◽  
Lun-Lun Chen ◽  
Jia-Rong Wu ◽  
Yung-Hsien Wu
Keyword(s):  
Tetragonal Zro2 ◽  
Si Substrate ◽  
Mos Capacitors

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Al Doping ◽  
Nonvolatile Memory Device

Al2O3–Cu2O composite charge-trapping nonvolatile memory

2016 ◽  
Vol 28 (1) ◽  
pp. 928-933 ◽  
Author(s):  
Jinqiu Liu ◽  
Jianxin Lu ◽  
Bo Xu ◽  
Yidong Xia ◽  
Jiang Yin ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Composite Charge
Sign in / Sign up

Export Citation Format

Share Document