Performance of nonvolatile memory by using band-engineered SrTiO3/HfON stack as charge-trapping layer
2012 ◽
Vol 52
(11)
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pp. 2527-2531
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2008 ◽
Vol 29
(3)
◽
pp. 265-268
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Keyword(s):
2016 ◽
Vol 28
(1)
◽
pp. 928-933
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Keyword(s):