Charge trapping process of nonvolatile memory devices based on CdTe and CdTe–CdSe core-shell nanoparticles/poly(methylmethacrylate) nanocomposites

2011 ◽  
Vol 98 (24) ◽  
pp. 243306 ◽  
Author(s):  
Dong Yeol Yun ◽  
Jung Min Son ◽  
Tae Whan Kim ◽  
Sung Woo Kim ◽  
Sang Wook Kim
2019 ◽  
Vol 40 (12) ◽  
pp. 1970026
Author(s):  
Chen‐Tsyr Lo ◽  
Yu Watanabe ◽  
Daiki Murakami ◽  
Chien‐Chung Shih ◽  
Kazuhiro Nakabayashi ◽  
...  

2016 ◽  
Vol 52 (45) ◽  
pp. 7269-7272 ◽  
Author(s):  
Chen-Tsyr Lo ◽  
Yu Watanabe ◽  
Hiroshi Oya ◽  
Kazuhiro Nakabayashi ◽  
Hideharu Mori ◽  
...  

Solution processable cross-linked nanoparticles with a cross-linked conjugated polythiophene core and a hydrophilic shell are firstly explored as charge storage materials for high performance transistor-type memory devices.


2007 ◽  
Vol 253 (12) ◽  
pp. 5325-5333 ◽  
Author(s):  
Himani Sharma ◽  
Shailesh N. Sharma ◽  
Sukhvir Singh ◽  
Ram Kishore ◽  
Gurmeet Singh ◽  
...  

2004 ◽  
Vol 51 (3) ◽  
pp. 444-451 ◽  
Author(s):  
E. Lusky ◽  
Y. Shacham-Diamand ◽  
G. Mitenberg ◽  
A. Shappir ◽  
I. Bloom ◽  
...  

2012 ◽  
Vol 23 (10) ◽  
pp. 105202 ◽  
Author(s):  
Yongsung Ji ◽  
Minhyeok Choe ◽  
Byungjin Cho ◽  
Sunghoon Song ◽  
Jongwon Yoon ◽  
...  

2019 ◽  
Vol 11 (37) ◽  
pp. 34424-34429 ◽  
Author(s):  
Haining Liu ◽  
Menghua Cui ◽  
Chunhe Dang ◽  
Wen Wen ◽  
Xinsheng Wang ◽  
...  

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.


2019 ◽  
Vol 40 (12) ◽  
pp. 1900115 ◽  
Author(s):  
Chen‐Tsyr Lo ◽  
Yu Watanabe ◽  
Daiki Murakami ◽  
Chien‐Chung Shih ◽  
Kazuhiro Nakabayashi ◽  
...  

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