Effects of Quantum Confinement on Interdependence between DOS Spectrum and C(V) Characteristic of Si Nanowire-Based MOS Structure

2019 ◽  
Vol 28 (7) ◽  
pp. 51-56
Author(s):  
Valeri Ligatchev ◽  
Sai Kong Chin
Keyword(s):  
Quantum Confinement ◽  
Si Nanowire ◽  
Mos Structure

Quantum Confinement Induced Performance Enhancement in Sub-5-nm Lithographic Si Nanowire Transistors

Nano Letters ◽  
2011 ◽  
Vol 11 (4) ◽  
pp. 1412-1417 ◽  
Author(s):  
Krutarth Trivedi ◽  
Hyungsang Yuk ◽  
Herman Carlo Floresca ◽  
Moon J. Kim ◽  
Walter Hu
Keyword(s):  
Quantum Confinement ◽  
Performance Enhancement ◽  
Si Nanowire ◽  
Nanowire Transistors

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

2007 ◽  
Vol 28 (10) ◽  
pp. 909-912 ◽  
Author(s):  
Subhash C. Rustagi ◽  
N. Singh ◽  
Y. F. Lim ◽  
G. Zhang ◽  
S. Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
Si Nanowire ◽  
Quantum Confinement Effects

Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors

Nano Letters ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 5465-5470 ◽  
Author(s):  
Kyung Soo Yi ◽  
Krutarth Trivedi ◽  
Herman C. Floresca ◽  
Hyungsang Yuk ◽  
Walter Hu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Confinement ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Confinement Effects ◽  
Si Nanowire ◽  
Quantum Confinement Effects
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