On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure

M. I. Vexler

doi:10.1134/1.2140308

On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure

Semiconductors ◽

10.1134/1.2140308 ◽

2005 ◽

Vol 39 (12) ◽

pp. 1381 ◽

Cited By ~ 3

Author(s):

M. I. Vexler

Keyword(s):

Quantum Confinement ◽

Electrical Characteristics ◽

Mos Structure

Download Full-text

Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure

ECS Transactions ◽

10.1149/1.3206625 ◽

2019 ◽

Vol 25 (6) ◽

pp. 265-270 ◽

Cited By ~ 3

Author(s):

Kiyohisa Funamizu ◽

Yueh Chin Lin ◽

Kuniyuki Kakushima ◽

Parhat Ahmet ◽

Kazuo Tsutsui ◽

...

Keyword(s):

Gate Dielectrics ◽

Electrical Characteristics ◽

Mos Structure

Download Full-text

Effects of Quantum Confinement on Interrelation Between DOS Spectrum and C(V) Dependencies of Si Nanowire-Based MOS Structure

ECS Meeting Abstracts ◽

10.1149/ma2010-01/32/1533 ◽

2010 ◽

Keyword(s):

Quantum Confinement ◽

Si Nanowire ◽

Mos Structure

Download Full-text

The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs

Journal of Semiconductors ◽

10.1088/1674-4926/35/4/044004 ◽

2014 ◽

Vol 35 (4) ◽

pp. 044004

Author(s):

Minmin Fan ◽

Jingping Xu ◽

Lu Liu ◽

Yurong Bai

Keyword(s):

Quantum Confinement ◽

Electrical Characteristics ◽

The Impact

Download Full-text

The Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator (SOI) FinFETs by Quantum Transport Analysis

10.7567/ssdm.2010.p-3-2 ◽

2010 ◽

Author(s):

K. M. Liu

Keyword(s):

Quantum Transport ◽

Quantum Confinement ◽

Silicon On Insulator ◽

Electrical Characteristics ◽

Transport Analysis

Download Full-text

Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure

ECS Meeting Abstracts ◽

10.1149/ma2009-02/25/2128 ◽

2009 ◽

Keyword(s):

Gate Dielectrics ◽

Electrical Characteristics ◽

Mos Structure

Download Full-text

Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc19 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC19

Author(s):

Keng-Ming Liu

Keyword(s):

Quantum Transport ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Electrical Characteristics ◽

Transport Analysis

Download Full-text

Effects of Quantum Confinement on Electrical Characteristics of 12-nm Silicon-on-Insulator Fin Field-Effect Transistors by Quantum Transport Analysis

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc19 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC19 ◽

Cited By ~ 1

Author(s):

Keng-Ming Liu

Keyword(s):

Quantum Transport ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon On Insulator ◽

Electrical Characteristics ◽

Transport Analysis

Download Full-text

Study of the energy distribution of the interface trap density in a GeSn MOS structure by numerical simulation of the electrical characteristics

Applied Surface Science ◽

10.1016/j.apsusc.2013.09.022 ◽

2014 ◽

Vol 291 ◽

pp. 25-30 ◽

Cited By ~ 5

Author(s):

B. Baert ◽

M. Schmeits ◽

N.D. Nguyen

Keyword(s):

Numerical Simulation ◽

Energy Distribution ◽

Trap Density ◽

Interface Trap Density ◽

Interface Trap ◽

Electrical Characteristics ◽

Mos Structure

Download Full-text

Electrical characteristics of silicon MOS structure formed by a novel low-temperature thermal oxidation method

Electronics Letters ◽

10.1049/el:19860024 ◽

1986 ◽

Vol 22 (1) ◽

pp. 35-36 ◽

Cited By ~ 1

Author(s):

J.-H. Yue ◽

Y. Uchida ◽

M. Matsumura

Keyword(s):

Low Temperature ◽

Thermal Oxidation ◽

Electrical Characteristics ◽

Oxidation Method ◽

Mos Structure

Download Full-text

Effects of Quantum Confinement on Interdependence between DOS Spectrum and C(V) Characteristic of Si Nanowire-Based MOS Structure

ECS Transactions ◽

10.1149/1.3503349 ◽

2019 ◽

Vol 28 (17) ◽

pp. 27-32

Author(s):

Valeri Ligatchev ◽

Sai Kong Chin

Keyword(s):

Quantum Confinement ◽

Si Nanowire ◽

Mos Structure

Download Full-text