Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors

Nano Letters ◽  
2011 ◽  
Vol 11 (12) ◽  
pp. 5465-5470 ◽  
Author(s):  
Kyung Soo Yi ◽  
Krutarth Trivedi ◽  
Herman C. Floresca ◽  
Hyungsang Yuk ◽  
Walter Hu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Confinement ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Confinement Effects ◽  
Si Nanowire ◽  
Quantum Confinement Effects

Ambipolar Transport Behaviors in Fullerene Peapod Transistors

2007 ◽  
Vol 121-123 ◽  
pp. 521-524 ◽  
Author(s):  
Ao Guo ◽  
Yun Yi Fu ◽  
Lun Hui Guan ◽  
Zu Jin Shi ◽  
Zhen Nan Gu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Large Percentage ◽  
C60 Fullerene ◽  
Electrical Transport Properties ◽  
Ambipolar Behavior ◽  
Ambipolar Transport

The electrical transport properties of C70 and C60 fullerene peapods are investigated. We report the fabrications and performances of field-effect transistors (FETs) based on C70 and C60 fullerene peapods. A large percentage of the fullerene peapod-FETs we fabricated exhibit ambipolar characteristics with high Ion/Ioff ratio at room temperature in air. The origin of ambipolar behavior is qualitatively discussed.

Observation of quantum confinement effects in strained Si0.84Ge0.16/Si quantum wells at room temperature

1993 ◽  
Vol 62 (21) ◽  
pp. 2713-2715 ◽  
Author(s):  
Y. F. Chen ◽  
Y. T. Dai ◽  
H. P. Chou ◽  
D. C. Chang ◽  
C. Y. Chang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Confinement Effects ◽  
Quantum Confinement Effects

Electrical transport properties in electroless-etched Si nanowire field-effect transistors

2010 ◽  
Vol 87 (11) ◽  
pp. 2407-2410 ◽  
Author(s):  
Kyeong-Ju Moon ◽  
Ji-Hyuk Choi ◽  
Tae-Il Lee ◽  
Moon-Ho Ham ◽  
Wan-Joo Maeng ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Transport Properties ◽  
Si Nanowire

Quantum Confinement in Single Layer a-Si:H Films

1996 ◽  
Vol 420 ◽  
Author(s):  
S. A. Koehler ◽  
H. Fritzsche
Keyword(s):  
Film Thickness ◽  
Amorphous Silicon ◽  
Transmission Spectrum ◽  
Coherence Length ◽  
Quantum Confinement ◽  
Room Temperature ◽  
Single Layer ◽  
Confinement Effects ◽  
Quantum Confinement Effects ◽  
Careful Investigation

AbstractQuantum confinement effects in the transmission spectrum of thin amorphous silicon, a-Si:H, films require a coherence length comparable to the film thickness, as well as good film homogeneity. After a careful investigation, we conclude that there is no quantum confinement in single layer a-Si:H films at room temperature.

Low-Temperature Transport Characteristics and Quantum-Confinement Effects in Gate-All-Around Si-Nanowire N-MOSFET

2007 ◽  
Vol 28 (10) ◽  
pp. 909-912 ◽  
Author(s):  
Subhash C. Rustagi ◽  
N. Singh ◽  
Y. F. Lim ◽  
G. Zhang ◽  
S. Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Confinement ◽  
Confinement Effects ◽  
Si Nanowire ◽  
Quantum Confinement Effects
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