Electrical Characteristics of a Reduced-Gate Structure Polycrystalline Silicon Thin Film Transistor Using Field-Aided Lateral Crystallization

2019 ◽  
Vol 33 (5) ◽  
pp. 173-181 ◽  
Author(s):  
Jung Sun You ◽  
Kwang Jin Lee ◽  
Duck-Kyun Choi ◽  
Young-Bae Kim
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Silicon Thin Film ◽  
Gate Structure ◽  
Lateral Crystallization

A Novel Self-Aligned Field Induced Drain Polycrystalline Silicon Thin Film Transistor Fabricated by using a Selective Side Etch Process

2006 ◽  
Vol 910 ◽  
Author(s):  
Ta-Chuan Liao ◽  
Chun-Yu Wu ◽  
Feng-Tso Chien ◽  
Chun-Chien Tsai ◽  
Hsiu-Hsin Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Electrical Performance ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Light Emitting ◽  
Gate Structure ◽  
Vacuum Gaps ◽  
Matrix Liquid

AbstractA novel T-shaped-gated (T-Gate) polycrystalline silicon thin-film transistor (poly-Si TFT) with vacuum gaps has been proposed and fabricated only with a simple process. The T-Gate structure is formed only by a selective undercut-etching technology of the Mo/Al bi-layers. Then, vacuum gaps are in-situ embedded in this T-Gate structure subsequent to capping the SiH4-based passivation oxide under the vacuum process chamber. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher maximum on-off current ratio of 4.6 e107, and the lower off-state leakage current at VGS = -10 V and VDS = 5V of about 100 times less than that of the conventional one. It is attributed to the additional undoped offset region and the vacuum gap to reduce the maximum electric field at drain junction while ascribed to the sub-gate to maintain the on-current. Therefore, such a T-Gate poly-Si TFT is very suitable for the applications and manufacturing in active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs).

Selectively Nucleated Lateral Crystallization for a Large Single-Grained Pb(Zr,Ti)O3 on Polycrystalline-Silicon Thin-Film Transistors for System-On-Glass Applications

2015 ◽  
Vol 1792 ◽  
Author(s):  
Jae Hyo Park ◽  
Seung Ki Joo
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Silicon Thin Film ◽  
Retention Characteristics ◽  
Lateral Crystallization ◽  
Total Structure ◽  
Desirable Location

ABSTRACTA single-grained Pb(Zr,Ti)O3 (PZT) was successfully grown for the gate dielectric of polycrystalline-silicon (poly-Si) thin-film transistor (TFT). The total structure was MoW/PZT/HfO2/poly-Si/glass. The giant single-grained PZT was obtained by controlling the artificial nucleation formed by Pt dots in a desirable location and enlarging the nucleated seed until it covers the poly-Si channel. The single-grained diameter size was 40 μm with a (100) dominated texture. The poly-Si memory device with single-grained PZT showed an excellent ferroelectric, electrical and reliability properties comparing with poly-Si memory device with poly-grained PZT. Moreover, eliminating the grain boundary in PZT film showed the fatigue and retention characteristics with only 1.1 % after 1013 cycles and 22 % after 1 month, respectively.

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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