Electrical characteristics and mechanical limitation of polycrystalline silicon thin film transistor on steel foil under strain

2009 ◽  
Vol 106 (11) ◽  
pp. 114502 ◽  
Author(s):  
Po-Chin Kuo ◽  
Abbas Jamshidi-Roudbari ◽  
Miltiadis Hatalis
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Electrical Characteristics ◽  
Silicon Thin Film

A Novel Multi-Channel Poly-Si TFT Improving Hydrogen Passivation

1997 ◽  
Vol 471 ◽  
Author(s):  
C. M. Park ◽  
J.-H. Jeon ◽  
J.-S. Yoo ◽  
M.-K. Han
Keyword(s):  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Gate Oxide ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
New Device ◽  
Hydrogen Radicals ◽  
Long Channel ◽  
Conventional Device

ABSTARCT:We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFT. The new multi-channel TFT has stripe-cuts in gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer. After 90 min. hydrogenation of the new device, the electrical characteristics such as threshold voltage and field effect mobility are improved more than those of conventional device.The new multi-channel poly-Si TFT, which receives more hydrogen radicals thorough gate oxide than the conventional multi-channel TFT, can be hydrogenated effectively in long channel devices. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation path is the diffusion though the gate oxide.

A Center-Offset Polycrystalline-Silicon Thin-Film Transistor With ${\rm n}^{+}$ Amorphous-Silicon Contacts

2009 ◽  
Vol 30 (1) ◽  
pp. 36-38 ◽  
Author(s):  
J. H. Oh ◽  
D. H. Kang ◽  
W. H. Park ◽  
J. Jang ◽  
Y. J. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage

2003 ◽  
Vol 42 (Part 1, No. 3) ◽  
pp. 1164-1167 ◽  
Author(s):  
Du-Zen Peng ◽  
Ting-Chang Chang ◽  
Chin-Fu Liu ◽  
Ping-Hung Yeh ◽  
Po-Tsun Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Breakdown Voltage ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film

Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

2002 ◽  
Vol 81 (25) ◽  
pp. 4763-4765 ◽  
Author(s):  
Du Zen Peng ◽  
Ting-Chang Chang ◽  
Po-Sheng Shih ◽  
Hsiao-Wen Zan ◽  
Tiao-Yuan Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Silicon Thin Film
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