High-Speed Through Silicon Via(TSV) Filling Using Diallylamine Additive

2011 ◽  
Vol 158 (12) ◽  
pp. D715 ◽  
Author(s):  
Taro Hayashi ◽  
Kazuo Kondo ◽  
Takeyasu Saito ◽  
Minoru Takeuchi ◽  
Naoki Okamoto
Keyword(s):  
High Speed ◽  
Through Silicon Via

High Speed Copper Electrodeposition for Through Silicon Via(TSV)

2019 ◽  
Vol 25 (38) ◽  
pp. 127-131
Author(s):  
Kazuo Kondo ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
Naoki Okamoto
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via

(Invited) High Speed Copper Electrodeposition for Through Silicon Via(TSV)

2019 ◽  
Vol 41 (43) ◽  
pp. 45-51 ◽  
Author(s):  
Taro Hayashi ◽  
Kazuo Kondo ◽  
Minoru Takeuchi ◽  
Yushi Suzuki ◽  
Takeyasu Saito ◽  
...  
Keyword(s):  
High Speed ◽  
Copper Electrodeposition ◽  
Through Silicon Via

Effect of Through-Silicon-Via Joule Heating on Device Performance for Low-Powered Mobile Applications

2014 ◽  
Vol 136 (4) ◽  
Author(s):  
Fahad Mirza ◽  
Gaurang Naware ◽  
Ankur Jain ◽  
Dereje Agonafer
Keyword(s):  
Joule Heating ◽  
Mobile Applications ◽  
High Speed ◽  
Three Dimensional ◽  
Signal Propagation ◽  
Junction Temperature ◽  
Device Performance ◽  
Through Silicon Via ◽  
Heterogeneous Devices ◽  
Efficient Integration

Three-dimensional (3D) through-silicon-via (TSV) technology is emerging as a powerful technology to reduce package footprint, decrease interconnection power, higher frequencies, and provide efficient integration of heterogeneous devices. TSVs provide high speed signal propagation due to reduced interconnect lengths as compared to wire-bonding. The current flowing through the TSVs results in localized heat generation (joule heating), which could be detrimental to the device performance. The effect of joule heating on performance measured by transconductance, electron mobility (e− mobility), and channel thermal noise is presented. Results indicate that joule heating has a significant effect on the junction temperature and subsequently results in 10–15% performance hit.

scholarly journals Design of 2.5D Interposer in High Bandwidth Memory and Through Silicon Via for High Speed Signal

2020 ◽  
Author(s):  
Bo Pu
Keyword(s):  
Artificial Intelligence ◽  
High Speed ◽  
High Performance ◽  
Equivalent Model ◽  
Electrical Characteristics ◽  
Through Silicon Via ◽  
High Bandwidth ◽  
Signal Path ◽  
High Speed Switching ◽  
Performance Computing

<p>The 2.5D interposer becomes a crucial solution to realize grand bandwidth of HBM for the increasing data requirement of high performance computing (HPC) and Artificial Intelligence (AI) applications. To overcome high speed switching bottleneck caused by the large resistive and capacitive characteristics of interposer, design methods to achieve an optimized performance in a limited routing area are proposed. Unlike the conventional single through silicon via (TSV), considering the reliability, multiple TSV are used as the robust 3D interconnects for each signal path. An equivalent model to accurately describe the electrical characteristics of the multiple TSVs, and a configuration pattern strategy of TSV to mitigate crosstalk are also proposed.</p>

Reduction of signal reflection along through silicon via channel in high-speed three-dimensional integration circuit

2014 ◽  
Vol 23 (3) ◽  
pp. 038401 ◽  
Author(s):  
Xiao-Xian Liu ◽  
Zhang-Ming Zhu ◽  
Yin-Tang Yang ◽  
Feng-Juan Wang ◽  
Rui-Xue Ding
Keyword(s):  
High Speed ◽  
Three Dimensional ◽  
Through Silicon Via

High-Frequency Temperature-Dependent Through-Silicon-Via (TSV) Model and High-Speed Channel Performance for 3-D ICs

2016 ◽  
Vol 33 (2) ◽  
pp. 17-29 ◽  
Author(s):  
Manho Lee ◽  
Daniel H. Jung ◽  
Heegon Kim ◽  
Jonghyun Cho ◽  
Joungho Kim
Keyword(s):  
High Frequency ◽  
High Speed ◽  
Temperature Dependent ◽  
Through Silicon Via ◽  
Channel Performance ◽  
Frequency Temperature
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