Effect of Functional Groups of Complexing Agents on the Performance of Cu CMP Slurry

2019 ◽  
Vol 25 (38) ◽  
pp. 55-63
Author(s):  
Yung Jun Kim ◽  
Jae Han Bae ◽  
Jae Jeong Kim
Keyword(s):  
Functional Groups ◽  
Complexing Agents ◽  
Cu Cmp

Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent

2011 ◽  
Vol 236-238 ◽  
pp. 3020-3023 ◽  
Author(s):  
Yan Gang He ◽  
Xiao Wei Gan ◽  
Wei Hong ◽  
Yi Hu ◽  
Yu Ling Liu
Keyword(s):  
Reaction Mechanism ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Mechanism Analysis ◽  
Slurry Stability ◽  
Cu Cmp ◽  
Better Than

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

Role of the Functional Groups of Complexing Agents in Copper Slurries

2006 ◽  
Vol 153 (7) ◽  
pp. G650 ◽  
Author(s):  
Udaya B. Patri ◽  
Serdar Aksu ◽  
S. V. Babu
Keyword(s):  
Functional Groups ◽  
Complexing Agents

scholarly journals Exploring the role of −NH2 functional groups of ethylenediamine in chemical mechanical polishing of GCr15 bearing steel

Friction ◽  
2020 ◽  
Author(s):  
Hanqiang Wu ◽  
Liang Jiang ◽  
Xia Zhong ◽  
Jinwei Liu ◽  
Na Qin ◽  
...  
Keyword(s):  
Functional Groups ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Bearing Steel ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Acidic Ph ◽  
Gcr15 Steel ◽  
Gcr15 Bearing Steel

AbstractEthylenediamine with two −NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing (CMP) slurries for a high carbon chromium GCr15 bearing steel (equivalent to AISI 52100). The polishing performance and corresponding mechanism of −NH2 functional groups were thoroughly investigated as a function of pH. It is revealed that, when polished with ethylenediamine and H2O2-based slurries, the material removal rate (MRR) and surface roughness Ra of GCr15 steel gradually decrease as pH increases. Compared with acidic pH of 4.0, at alkaline pH of 10.0, the surface film of GCr15 steel has much higher corrosion resistance and wear resistance, and thus the material removal caused by the pure corrosion and corrosion-enhanced wear are greatly inhibited, resulting in much lower MRR and Ra. Moreover, it is confirmed that a more protective composite film, consisting of more Fe3+ hydroxides/oxyhydroxides and complex compounds with −NH2 functional groups of ethylenediamine, can be formed at pH of 10.0. Additionally, the polishing performance of pure iron and a medium carbon 45 steel exhibits a similar trend as GCr15 steel. The findings suggest that acidic pH could be feasible for amine groups-based complexing agents to achieve efficient CMP of iron-based metals.

Comparison of chelating ion exchange resins in sorption of copper(II) and zinc(II) complexes with ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA)

2008 ◽  
Vol 86 (10) ◽  
pp. 958-969 ◽  
Author(s):  
Dorota Kołodyńska ◽  
Zbigniew Hubicki
Keyword(s):  
Heavy Metal ◽  
Functional Groups ◽  
Heavy Metal Ions ◽  
Ethylenediaminetetraacetic Acid ◽  
Ph Value ◽  
Nitrilotriacetic Acid ◽  
Complexing Agents ◽  
Ion Exchange Resins ◽  
Ion Exchangers ◽  
Exchange Resins

This paper investigates the macroporous chelating ion exchangers with different functional groups for their sorption properties towards the copper(II) and zinc(II) ions. The investigations by the dynamic and static methods were carried out in the presence of traditional complexing agents. The differences in affinity of Cu(II) and Zn(II) complexes with these complexones result from the kind of functional groups of the chelating ion exchangers, such as thiourea, aminomethylphosphonate, iminodiacetate, and polyamine groups as well as from the pH value. The quantitative removal of studied heavy metal complexes using chelating ion exchangers is achieved in the case when resins compete successfully for the heavy metal ions against these chelators.Key words: chelating resins, heavy metals, EDTA, NTA.

Potential-pH Diagrams of Interest to Chemical Mechanical Planarization of Copper Thin Films

2005 ◽  
Vol 867 ◽  
Author(s):  
Serdar Aksu
Keyword(s):  
Performance Metrics ◽  
Ethylenediaminetetraacetic Acid ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Copper Removal ◽  
Chemical Components ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Interlayer Dielectric ◽  
Cu Cmp

AbstractChemical mechanical planarization (CMP), which can globally planarize both silicon dioxide (the prevalent interlayer dielectric), and copper films, has become the key process in the damascene method used for producing integrated circuit (IC) devices with multilevel copper interconnects. Cu CMP is typically carried out with slurries containing oxidizing agents, complexing agents, and corrosion inhibitors as the principal chemical components. In such slurries, complexing agents enhance the solubility of copper and increase the dissolution rate of the abraded material in Cu CMP. They also assist achieving high copper removal rates during dynamic polishing conditions. The nature of the complexing agent used, the pH and the redox potential of the slurry system are among the main factors controlling the dissolution and passivation behaviors of copper during CMP. Consequently, these factors are intimately related to the key CMP performance metrics such as removal rate and planarity. In this paper, potentialpH diagrams of copper in aqueous systems containing a number of organic complexing agents including ethylenediaminetetraacetic acid (EDTA), nitrilotriacetic acid (NTA), oxalic acid and malonic acid are presented. The predominance regions of copper complexes under different copper and ligand activities and their implications on copper removal during CMP are discussed.

Sign in / Sign up

Export Citation Format

Share Document