Effects of the Functional Groups of Complexing Agents and Cu Oxide Formation on Cu Dissolution Behaviors in Cu CMP Process

2011 ◽  
Vol 158 (2) ◽  
pp. H190 ◽  
Author(s):  
Yung Jun Kim ◽  
Oh Joong Kwon ◽  
Min Cheol Kang ◽  
Jae Jeong Kim
Keyword(s):  
Functional Groups ◽  
Complexing Agents ◽  
Oxide Formation ◽  
Cu Cmp ◽  
Cu Dissolution

Effect of Functional Groups of Complexing Agents on the Performance of Cu CMP Slurry

2019 ◽  
Vol 25 (38) ◽  
pp. 55-63
Author(s):  
Yung Jun Kim ◽  
Jae Han Bae ◽  
Jae Jeong Kim
Keyword(s):  
Functional Groups ◽  
Complexing Agents ◽  
Cu Cmp

Chemical Mechanical Polishing of Cu Pattern Wafer Based Alkaline Slurry in GLSI with R(NH2)n as Complexing Agent

2011 ◽  
Vol 236-238 ◽  
pp. 3020-3023 ◽  
Author(s):  
Yan Gang He ◽  
Xiao Wei Gan ◽  
Wei Hong ◽  
Yi Hu ◽  
Yu Ling Liu
Keyword(s):  
Reaction Mechanism ◽  
Chemical Mechanical Polishing ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Mechanism Analysis ◽  
Slurry Stability ◽  
Cu Cmp ◽  
Better Than

Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity. This requirements are met through the complexing agents. Based on the reaction mechanism analysis of Cu in alkaline slurry with R(NH2)n as complexing agent in CMP, the performance of Cu dishing and erosion were discussed. The results showed that the slurry stability can be improved obviously by the addition of R(NH2)n as complexing agent, both Cu1 and Cu2 have good dishing and erosion performance. Furthermore, the dishing condition of Cu2 (180-230nm) is better than that of Cu1 (280-370nm), and the erosion condition of Cu2 (230-260nm) is also better than that of Cu1 (450-500nm).

Role of the Functional Groups of Complexing Agents in Copper Slurries

2006 ◽  
Vol 153 (7) ◽  
pp. G650 ◽  
Author(s):  
Udaya B. Patri ◽  
Serdar Aksu ◽  
S. V. Babu
Keyword(s):  
Functional Groups ◽  
Complexing Agents

scholarly journals Exploring the role of −NH2 functional groups of ethylenediamine in chemical mechanical polishing of GCr15 bearing steel

Friction ◽  
2020 ◽  
Author(s):  
Hanqiang Wu ◽  
Liang Jiang ◽  
Xia Zhong ◽  
Jinwei Liu ◽  
Na Qin ◽  
...  
Keyword(s):  
Functional Groups ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Bearing Steel ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Complexing Agent ◽  
Acidic Ph ◽  
Gcr15 Steel ◽  
Gcr15 Bearing Steel

AbstractEthylenediamine with two −NH2 functional groups was used as a critical complexing agent in chemical mechanical polishing (CMP) slurries for a high carbon chromium GCr15 bearing steel (equivalent to AISI 52100). The polishing performance and corresponding mechanism of −NH2 functional groups were thoroughly investigated as a function of pH. It is revealed that, when polished with ethylenediamine and H2O2-based slurries, the material removal rate (MRR) and surface roughness Ra of GCr15 steel gradually decrease as pH increases. Compared with acidic pH of 4.0, at alkaline pH of 10.0, the surface film of GCr15 steel has much higher corrosion resistance and wear resistance, and thus the material removal caused by the pure corrosion and corrosion-enhanced wear are greatly inhibited, resulting in much lower MRR and Ra. Moreover, it is confirmed that a more protective composite film, consisting of more Fe3+ hydroxides/oxyhydroxides and complex compounds with −NH2 functional groups of ethylenediamine, can be formed at pH of 10.0. Additionally, the polishing performance of pure iron and a medium carbon 45 steel exhibits a similar trend as GCr15 steel. The findings suggest that acidic pH could be feasible for amine groups-based complexing agents to achieve efficient CMP of iron-based metals.

Mechanism of Cu removal during CMP in H2O2-glycine based slurries

1999 ◽  
Vol 566 ◽  
Author(s):  
M. Hariharaputhiran ◽  
S. Ramarajan ◽  
Y Li ◽  
S.V. Babu ◽  
S.V. Babu
Keyword(s):  
Hydrogen Peroxide ◽  
Hydroxyl Radical ◽  
Dissolution Rate ◽  
Film Formation ◽  
Ex Situ ◽  
Copper Dissolution ◽  
Radical Generation ◽  
Cu Cmp ◽  
Cu Dissolution

Hydroxyl radical generation has been observed during Cu CMP using hydrogen peroxide-glycine based slurries. While the Cu dissolution/polish rates increased with increasing glycine concentration, the copper dissolution rate decreased with increasing peroxide concentration indicating the occurrence of both dissolution and passive film formation during CMP. This is further confirmed by both in situ and ex situ electrochemical experiments.

Effect of Nano-Size Silica Abrasives in Chemical Mechanical Polishing of Copper

2004 ◽  
Vol 816 ◽  
Author(s):  
Su-Ho Jung ◽  
Rajiv K. Singh
Keyword(s):  
Surface Layer ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Complexing Agents ◽  
Oxide Formation ◽  
Chemically Modified ◽  
Modified Surface ◽  
Nano Size ◽  
Modified Surface Layer

AbstractThe effect of nano-size silica abrasives in chemical mechanical polishing (CMP) of copper is studied in order to reduce mechanical stresses during polishing, which may minimize defects such as surface scratches, copper peeling, dishing and erosion. In order to achieve low stress polishing of copper while maintaining removal rate efficiency, the formation of chemically modified surface layer, which can be mechanically removed by small size and low hardness abrasives, is critical. Complexing agents play an important role in the formation of a removable surface layer in the presence of the oxidizer, which is responsible for oxide formation, and the inhibitor, which passivates the surface. A new removal mechanism is proposed by correlating results of surface roughness after polishing with removal and etch rates. The effects of large silica and alumina abrasives, ranging from 200-1000 nm in diameter, are also studied to compare the different removal mechanisms.

Comparison of chelating ion exchange resins in sorption of copper(II) and zinc(II) complexes with ethylenediaminetetraacetic acid (EDTA) and nitrilotriacetic acid (NTA)

2008 ◽  
Vol 86 (10) ◽  
pp. 958-969 ◽  
Author(s):  
Dorota Kołodyńska ◽  
Zbigniew Hubicki
Keyword(s):  
Heavy Metal ◽  
Functional Groups ◽  
Heavy Metal Ions ◽  
Ethylenediaminetetraacetic Acid ◽  
Ph Value ◽  
Nitrilotriacetic Acid ◽  
Complexing Agents ◽  
Ion Exchange Resins ◽  
Ion Exchangers ◽  
Exchange Resins

This paper investigates the macroporous chelating ion exchangers with different functional groups for their sorption properties towards the copper(II) and zinc(II) ions. The investigations by the dynamic and static methods were carried out in the presence of traditional complexing agents. The differences in affinity of Cu(II) and Zn(II) complexes with these complexones result from the kind of functional groups of the chelating ion exchangers, such as thiourea, aminomethylphosphonate, iminodiacetate, and polyamine groups as well as from the pH value. The quantitative removal of studied heavy metal complexes using chelating ion exchangers is achieved in the case when resins compete successfully for the heavy metal ions against these chelators.Key words: chelating resins, heavy metals, EDTA, NTA.

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