Effect of Current Density on the Internal Stress Evolution during Galvanostatic Ti Thin Film Anodizing

2010 ◽  
Vol 157 (5) ◽  
pp. C166 ◽  
Author(s):  
Q. Van Overmeere ◽  
J.-F. Vanhumbeeck ◽  
J. Proost
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Current Density ◽  
Stress Evolution

In-Situ Monitoring of the Internal Stress Evolution during Thin Film Anodising

2019 ◽  
Vol 11 (24) ◽  
pp. 35-42
Author(s):  
Joris Proost ◽  
Jean-François Vanhumbeeck ◽  
Quentin Van Overmeere
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
In Situ Monitoring ◽  
Stress Evolution

Microstructural characterization of YBa2Cu3O7-x thin films formed by metalorganic CVD

1991 ◽  
Vol 49 ◽  
pp. 1080-1081
Author(s):  
P. Lu ◽  
W. Huang ◽  
C.S. Chern ◽  
Y.Q. Li ◽  
J. Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Film Growth ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Ion Milling ◽  
Conventional Grinding

The YBa2Cu3O7-x thin films formed by metalorganic chemical vapor deposition(MOCVD) have been reported to have excellent superconducting properties including a sharp zero resistance transition temperature (Tc) of 89 K and a high critical current density of 2.3x106 A/cm2 or higher. The origin of the high critical current in the thin film compared to bulk materials is attributed to its structural properties such as orientation, grain boundaries and defects on the scale of the coherent length. In this report, we present microstructural aspects of the thin films deposited on the (100) LaAlO3 substrate, which process the highest critical current density.Details of the thin film growth process have been reported elsewhere. The thin films were examined in both planar and cross-section view by electron microscopy. TEM sample preparation was carried out using conventional grinding, dimpling and ion milling techniques. Special care was taken to avoid exposure of the thin films to water during the preparation processes.

Spalling Technology of PZT Thin Film Capacitor using Internal Stress

2014 ◽  
Vol 134 (4) ◽  
pp. 85-89
Author(s):  
Kazutaka Sueshige ◽  
Fumiaki Honda ◽  
Tadatomo Suga ◽  
Masaaki Ichiki ◽  
Toshihiro Itoh
Keyword(s):  
Thin Film ◽  
Internal Stress ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Pzt Thin Film

High Current Density Effect on In-situ Atomic Migration Characteristics of a BiTe Thin Film System

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MC06
Author(s):  
Seunghyun Kim ◽  
Yong-Jin Park ◽  
Young-Chang Joo ◽  
Young-Bae Park
Keyword(s):  
Thin Film ◽  
Current Density ◽  
High Current Density ◽  
Density Effect ◽  
Film System ◽  
High Current ◽  
Thin Film System

scholarly journals Fabrication of Ni-Mn Microprobe Structure with Low Internal Stress and High Hardness by Employing DC Electrodeposition

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Kuan-Hui Cheng ◽  
Fu-Je Chen ◽  
Chun-Ying Lee ◽  
Chao-Sung Lin ◽  
Jung-Tang Huang ◽  
...  
Keyword(s):  
Internal Stress ◽  
Current Density ◽  
High Hardness ◽  
Power Source ◽  
Manganese Sulphate ◽  
Microelectronic Devices ◽  
Dc Power ◽  
Coating Composition ◽  
Mn Content ◽  
Columnar Grain

Due to its widely tunable mechanical property and incompatibility with most solders, Ni-Mn alloy can become a viable candidate in the fabrication of testing probe for microelectronic devices. In this study, the electrodeposition of Ni-Mn alloy in nickel sulphamate electrolyte with the addition of manganese sulphate was investigated under direct current (DC) power source. The effects of current density and Mn2+concentration in the electrolyte on the coating composition, cathodic efficiency, microstructure and mechanical properties were explored. The results showed that the raise of the Mn2+concentration in the electrolyte alone did not effectively increase the Mn content in the coating but reduce the cathodic efficiency. On the other hand, increasing the current density facilitated the codeposition of the Mn and rendered the crystallite from coarse columnar grain to the refined one. Thus, both hardness and internal stress of the coating increased. The fabrication of testing probes at 1 A/dm2was shown to satisfy the high hardness, low internal stress, reasonable fatigue life, and nonsticking requirements for this microelectronic application.

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