SiC Power Device Technology - Differences to Silicon and Their Influence on Device Processing and Performance

2019 ◽  
Vol 25 (12) ◽  
pp. 83-92
Author(s):  
Peter Friedrichs
Keyword(s):  
Power Device ◽  
Device Processing ◽  
And Performance ◽  
Device Technology

A Phase Diagram of the P3HT:PCBM Organic Photovoltaic System: Implications for Device Processing and Performance

2011 ◽  
Vol 44 (8) ◽  
pp. 2908-2917 ◽  
Author(s):  
Paul E. Hopkinson ◽  
Paul A. Staniec ◽  
Andrew J. Pearson ◽  
Alan D. F. Dunbar ◽  
Tao Wang ◽  
...  
Keyword(s):  
Phase Diagram ◽  
Photovoltaic System ◽  
Organic Photovoltaic ◽  
Device Processing ◽  
And Performance

Potential and Challenges of Diamond Wafer Toward Power Electronics

2018 ◽  
Vol 12 (2) ◽  
pp. 175-178
Author(s):  
Shinichi Shikata ◽  
Keyword(s):  
Energy Saving ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Power Device ◽  
Surface Finishing ◽  
Low Resistivity ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Century Development ◽  
Device Technology

To achieve a 50% worldwide reduction of CO2by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

Material Parameters for Analytical and Numerical Modeling of Si and Strained SiGe Heterostructure Devices

2001 ◽  
Vol 677 ◽  
Author(s):  
S. C. Jain ◽  
A. Mehra ◽  
S. Decoutere ◽  
W. Schoenmaker ◽  
M. Willander
Keyword(s):  
Boron Concentration ◽  
Material Parameters ◽  
Effective Masses ◽  
Device Processing ◽  
Computer Codes ◽  
And Performance ◽  
Experimental Values ◽  
Heterostructure Devices ◽  
Good Agreement ◽  
Strained Sige

ABSTRACTWe present calculated values of effective masses, bandgap reduction, and Fermi energy of p-doped Si and strained p-doped SiGe layers. The calculations have been made for Ge concentrations in the range 0 to 30% and boron concentration in the range 1018 cm−3 to 3×1020 cm−3. Empirical expressions for the effective masses are given. These expressions and calculated values of the other parameters are convenient for use in computer codes for modeling device processing and performance. To validate the calculated values, we have compared them with the available experimental results. Good agreement between the calculated and the experimental values is found.

Low power device technology with SiGe channel, HfSiON, and Poly-Si gate

2005 ◽  
Author(s):  
H.C.-H. Wang ◽  
Shang-Jr Chen ◽  
Ming-Fang Wang ◽  
Pang-Yen Tsai ◽  
Ching-Wei Tsai ◽  
...  
Keyword(s):  
Low Power ◽  
Power Device ◽  
Device Technology

Silicon Carbide Power Devices and Processing

2003 ◽  
Vol 764 ◽  
Author(s):  
J.B. Casady ◽  
J.R. Bonds ◽  
W.A. Draper ◽  
J.N. Merrett ◽  
I. Sankin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Product Development ◽  
Schottky Barrier ◽  
Power Device ◽  
Power Devices ◽  
Power Switch ◽  
Device Structures ◽  
Key Issues ◽  
Commercial Applications ◽  
Device Technology

AbstractAn overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. This paper discusses the performance of current available rectifiers and published power switch development and identifies key issues in processing and device structures which have influenced past and will impact future SiC product development.

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