Silicon Carbide Power Devices and Processing

2003 ◽  
Vol 764 ◽  
Author(s):  
J.B. Casady ◽  
J.R. Bonds ◽  
W.A. Draper ◽  
J.N. Merrett ◽  
I. Sankin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Product Development ◽  
Schottky Barrier ◽  
Power Device ◽  
Power Devices ◽  
Power Switch ◽  
Device Structures ◽  
Key Issues ◽  
Commercial Applications ◽  
Device Technology

AbstractAn overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. This paper discusses the performance of current available rectifiers and published power switch development and identifies key issues in processing and device structures which have influenced past and will impact future SiC product development.

Wide Bandgap Semiconductor Power Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
T. P. Chow ◽  
N. Ramungul ◽  
M. Ghezzo
Keyword(s):  
High Voltage ◽  
Wide Bandgap ◽  
Power Device ◽  
Experimental Demonstration ◽  
Power Devices ◽  
Process Technology ◽  
Power Semiconductor ◽  
Wide Bandgap Semiconductor ◽  
Simulated Performance ◽  
Device Structures

AbstractThe present status of high-voltage power semiconductor switching devices is reviewed. The choice and design of device structures are presented. The simulated performance of the key devices in 4H-SiC is described. The progress in high-voltage power device experimental demonstration is described. The material and process technology issues that need to be addressed for device commercialization are discussed.

scholarly journals Silicon carbide power device characteristics, applications and challenges: an overview

2020 ◽  
Vol 11 (4) ◽  
pp. 2194
Author(s):  
Muhamad Faizal Yaakub ◽  
Mohd Amran Mohd Radzi ◽  
Faridah Hanim Mohd Noh ◽  
Maaspaliza Azri
Keyword(s):  
Silicon Carbide ◽  
System Design ◽  
Power Electronics ◽  
Power Density ◽  
High Power ◽  
System Performance ◽  
Power Device ◽  
Power Devices ◽  
Performance Limitation ◽  
Design Challenges

Silicon (Si) based power devices have been employed in most high power applications since decades ago. However, nowadays, most major applications demand higher efficiency and power density due to various reasons. The previously well-known Si devices, unfortunately, have reached their performance limitation to cover all those requirements. Therefore, Silicon Carbide (SiC) with its unique and astonishing characteristic has gained huge attention, particularly in the power electronics field. Comparing both, SiC presents a remarkable ability to enhance overall system performance and the transition from Si to SiC is crucial. With regard to its importance, this paper provides an overview of the characteristics, advantages, and outstanding capabilities in various application for SiC devices. Furthermore, it is also important to disclose the system design challenges, which are discussed at the end of the paper.

Investigation of Package Effects on the Edge Termination E-Field for HV WBG Power Semiconductors

2017 ◽  
Vol 2017 (1) ◽  
pp. 000224-000230
Author(s):  
Haotao Ke ◽  
Yifan Jiang ◽  
Adam J. Morgan ◽  
Douglas C. Hopkins
Keyword(s):  
Schottky Barrier ◽  
Field Distribution ◽  
Schottky Barrier Diode ◽  
Power Device ◽  
Guard Ring ◽  
Power Devices ◽  
Conducting Plane ◽  
Power Semiconductor ◽  
Edge Termination ◽  
Reverse Blocking

Abstract The edge termination of a power semiconductor is defined as the spatial junction terminations around the edges of the power devices. Guard rings are used to contour the internal depletion regions and E-fields as they terminate at the edge termination, i.e. the intersection of the depletion regions and the wafer saw line where the crystal damage is located. Since there is no specific package for WBG power devices, wire bonds are still widely used to interconnect to the topside metal pads of the power devices. From previous research it is shown that wire bonding will not affect the E-field around the guard rings on a WBG device. However, planar power package, such as double-sided and power flip-chip device packaging could be a problem where the close distance between the topside of the power device and conducting plane may negatively affect the E-field distribution of the guard rings, which in turn lowers the reverse blocking capability of the WBG power device and increases leakage current creating greater on-state power loss, or even early break down. Few works have shown the Electric field distribution in embedded power modules. Therefore, a more detailed investigation and possible solution is needed for the proliferation of double-sided power packages. To investigate this packaging problem simulations were performed in Sentaurus TCAD and COMSOL based on the device physics and package geometries. Guard ring structures in 1.2kV and 10kV SiC Schottky Barrier Diode (SBD) were built and simulated in various double-sided package geometries, together with the thermal and mechanical evaluation of the package, to observe the influence on the E-field distribution in and out the WBG device. Different double-sided package structures were evaluated and a guideline (spacing/pad size/etc.) summarized for double-sided design. Moreover, a new bevel edge termination method was evaluated for double-sided WBG power semiconductor devices. Experimental reverse blocking test results will be reported in various temperature (from 25°C to 175°C) to verify the function of the package. The tests are on 1200V/50A SiC SBD (Schottky Barrier Diode) from Global Power Technology, which has double-sided Ag on both sides.

Measurement of Bonding Stress in Silicon High Power Device Structures by Infrared Photoelasticity Method

1999 ◽  
Vol 563 ◽  
Author(s):  
H. J. Peng ◽  
S. P. Wong ◽  
W. F. Lau ◽  
N. Ke ◽  
Shounan Zhao
Keyword(s):  
High Power ◽  
Quantitative Information ◽  
Bonding Process ◽  
Power Device ◽  
Geometrical Parameters ◽  
Interlaminar Stresses ◽  
Si Substrate ◽  
Power Devices ◽  
Si Substrates ◽  
Device Structures

AbstractSilicon high-power devices are commonly bonded to Mo electrodes using Al films. Bonding stress will inevitably be introduced into the Si substrate by such a process. In this work, the infrared (IR) photoelasticity (PE) method was employed to measure the stress distribution in the Si substrates induced by high temperature bonding process of Si/Al/Mo structures commonly used in the production of silicon thyristors. It is demonstrated that quantitative information on both the directions and magnitudes of the stress can be obtained. The dependence of the magnitude of the stress on the geometrical parameters of the structure has also been studied. The experimental results are shown to agree well with the calculated results derived from a theory of interlaminar stresses in composites.

History and Recent Developments of Packaging Technology for SiC Power Devices

2016 ◽  
Vol 858 ◽  
pp. 1043-1048 ◽  
Author(s):  
Karl Otto Dohnke ◽  
Karsten Guth ◽  
Nicolas Heuck
Keyword(s):  
Silicon Carbide ◽  
State Of The Art ◽  
Complex Structure ◽  
Junction Temperature ◽  
Power Device ◽  
Full Potential ◽  
Power Devices ◽  
Packaging Technology ◽  
Power Modules ◽  
Recent Developments

Packaging plays an important role to allow the full potential of silicon carbide devices to be realised. The physical properties of silicon carbide will allow devices to operate with junction temperatures well above 200 °C, but today standard-packaged SiC products are limited to a maximum junction temperature of 175 °C. The limitation lies in the packaging, because a power device package is a complex structure consisting of many components of different materials and with correspondingly different thermal properties. As such, the assembly technologies define both the performance and lifetime of discrete packages and power modules. In this paper we give an insight of packaging technology for SiC devices from the beginning in the mid-1980s through to the state-of-the-art of today. In addition, new packaging technologies to enable power SiC devices to operate up to 200 °C are discussed.

Design of Silicon Carbide Devices to Minimize the Impact of Variation of Epitaxial Parameters

2016 ◽  
Vol 858 ◽  
pp. 177-180 ◽  
Author(s):  
Rahul Radhakrishnan ◽  
Tony Witt ◽  
Seungchul Lee ◽  
Richard Woodin
Keyword(s):  
Silicon Carbide ◽  
Electric Field ◽  
Power Device ◽  
Device Physics ◽  
Optimized Design ◽  
Power Devices ◽  
Process Yield ◽  
Technological Readiness ◽  
The Impact

Optimized design of Silicon Carbide (SiC) power devices depends, besides power device physics, also on consideration of basic properties and technological readiness of the material. This paper presents a novel analysis of the dependence of variation of epitaxial doping and thickness on the determination of the optimum design point of SiC devices. We introduce electric field at epitaxy-substrate interface as a useful parameter in controlling the dependence of device parameters on epitaxy. Using this method as criterion for design can improve the robustness of SiC devices to epitaxial variation and hence the process yield.

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

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