Silicon Etching Technology Using Inductively Coupled Plasma Suitable for Fabrication of Silicon Nanowires and Ring Resonators

2019 ◽  
Vol 18 (1) ◽  
pp. 1065-1070
Author(s):  
Jingtao Zhou ◽  
Huajun Shen ◽  
Huihui Zhang ◽  
Xinyu Liu
Keyword(s):  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Ring Resonators ◽  
Silicon Etching ◽  
Inductively Coupled

scholarly journals Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4267
Author(s):  
Stefano Ponzoni ◽  
Sonia Freddi ◽  
Marta Agati ◽  
Vincent Le Borgne ◽  
Simona Boninelli ◽  
...  
Keyword(s):  
Photon Energy ◽  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Inner Core ◽  
Optical Measurements ◽  
Spectral Energy ◽  
Silicon Nanostructures ◽  
Relaxation Dynamics ◽  
Plasma Process ◽  
Inductively Coupled

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers’ transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiOx outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a “chaplet-like” core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2–2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiOx interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition.

Thermoelectric Device Based on Vertical Silicon Nanowires for On-Chip Integration

2014 ◽  
Vol 609-610 ◽  
pp. 789-795 ◽  
Author(s):  
Zhen Wang ◽  
Yang Yang Qi ◽  
Ming Liang Zhang ◽  
An Ji ◽  
Fu Hua Yang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Platinum Resistance Thermometer ◽  
Thermoelectric Device ◽  
Platinum Resistance ◽  
Resistance Thermometer ◽  
Inductively Coupled ◽  
Fold Reduction ◽  
Before And After ◽  
On Chip

A fabricating process of prototype thermoelectric device based on vertical silicon nanowires (SiNWs) for on-chip integration was presented. The SiNWs with diameter of 200 nm and height of 1 μm were fabricated by electron beam lithography and inductively coupled plasma etching. The gaps between the NWs were filled by the spin-on glass, which isolated the top and bottom electrodes. A serpentine platinum resistance thermometer coil was formed on the NWs to create temperature gradient across the NWs and measure the temperature of the top of NWs. I-V characteristics of the vertical device before and after annealing were measured. The nonlinear I-V curves were obtained, but the annealed one demonstrated 1000-fold reduction in resistance than the unannealed one.

scholarly journals Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowires

2019 ◽  
Vol 9 (17) ◽  
pp. 3462 ◽  
Author(s):  
Muhammad Bilal Khan ◽  
Dipjyoti Deb ◽  
Jochen Kerbusch ◽  
Florian Fuchs ◽  
Markus Löffler ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Density Functional Theory Calculations ◽  
Silicide Phase ◽  
Top Down ◽  
Inductively Coupled ◽  
Transmission Electron

We present results of our investigations on nickel silicidation of top-down fabricated silicon nanowires (SiNWs). Control over the silicidation process is important for the application of SiNWs in reconfigurable field-effect transistors. Silicidation is performed using a rapid thermal annealing process on the SiNWs fabricated by electron beam lithography and inductively-coupled plasma etching. The effects of variations in crystallographic orientations of SiNWs and different NW designs on the silicidation process are studied. Scanning electron microscopy and transmission electron microscopy are performed to study Ni diffusion, silicide phases, and silicide–silicon interfaces. Control over the silicide phase is achieved together with atomically sharp silicide–silicon interfaces. We find that {111} interfaces are predominantly formed, which are energetically most favorable according to density functional theory calculations. However, control over the silicide length remains a challenge.

Exploring the potential of high resolution inductively coupled plasma mass spectrometry towards non-destructive control and validation of electroless gold nanoparticles onto silicon nanowires hybrids

2019 ◽  
Vol 11 (31) ◽  
pp. 3987-3995 ◽  
Author(s):  
Yuliya E. Silina ◽  
Marcus Koch ◽  
Petra Herbeck-Engel ◽  
Igor Iatsunskyi
Keyword(s):  
Gold Nanoparticles ◽  
Silicon Nanowires ◽  
Hydrofluoric Acid ◽  
Inductively Coupled Plasma ◽  
Effective Strategy ◽  
Inductively Coupled ◽  
Plasma Mass Spectrometry ◽  
Hybrid Silicon ◽  
Electroless Gold ◽  
Non Destructive

We present a novel effective strategy for non-destructive control and validation of sensors consisting of hybrid silicon nanowires deposited with gold nanoparticles (AuNPs/SiNWs) produced via a hydrofluoric acid-assisted electroless fabrication method.

200-mm-diameter neutral beam source based on inductively coupled plasma etcher and silicon etching

2010 ◽  
Vol 28 (5) ◽  
pp. 1169-1174 ◽  
Author(s):  
Tomohiro Kubota ◽  
Osamu Nukaga ◽  
Shinji Ueki ◽  
Masakazu Sugiyama ◽  
Yoshimasa Inamoto ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Neutral Beam ◽  
Silicon Etching ◽  
Beam Source ◽  
Inductively Coupled
Sign in / Sign up

Export Citation Format

Share Document