scholarly journals Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
M. Agati ◽  
G. Amiard ◽  
V. Le Borgne ◽  
P. Castrucci ◽  
R. Dolbec ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Plasma Torch ◽  
Photoluminescence Properties ◽  
Growth Mechanisms ◽  
Inductively Coupled

scholarly journals Power Dissipation of an Inductively Coupled Plasma Torch under E Mode Dominated Regime

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 834
Author(s):  
Nan Yu ◽  
Renaud Jourdain ◽  
Mustapha Gourma ◽  
Fangda Xu ◽  
Adam Bennett ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Inductively Coupled Plasma ◽  
Plasma Torch ◽  
Electrical Response ◽  
Inductively Coupled ◽  
De Laval Nozzle ◽  
Surface Fabrication ◽  
Icp Torch ◽  
Frequency Power

This paper focuses on the power dissipation of a plasma torch used for an optical surface fabrication process. The process utilizes an inductively coupled plasma (ICP) torch that is equipped with a De-Laval nozzle for the delivery of a highly collimated plasma jet. The plasma torch makes use of a self-igniting coil and an intermediate co-axial tube made of alumina. The torch has a distinctive thermal and electrical response compared to regular ICP torches. In this study, the results of the power dissipation investigation reveal the true efficiency of the torch and discern its electrical response. By systematically measuring the coolant parameters (temperature change and flow rate), the power dissipation is extrapolated. The radio frequency power supply is set to 800 W, E mode, throughout the research presented in this study. The analytical results of power dissipation, derived from the experiments, show that 15.4% and 33.3% are dissipated by the nozzle and coil coolant channels, respectively. The experiments also enable the determination of the thermal time constant of the plasma torch for the entire range of RF power.

scholarly journals Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4267
Author(s):  
Stefano Ponzoni ◽  
Sonia Freddi ◽  
Marta Agati ◽  
Vincent Le Borgne ◽  
Simona Boninelli ◽  
...  
Keyword(s):  
Photon Energy ◽  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Inner Core ◽  
Optical Measurements ◽  
Spectral Energy ◽  
Silicon Nanostructures ◽  
Relaxation Dynamics ◽  
Plasma Process ◽  
Inductively Coupled

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers’ transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiOx outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a “chaplet-like” core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2–2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiOx interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition.

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