scholarly journals Oxygen migration enthalpy likely limits oxide precipitate dissolution during tabula rasa

2017 ◽  
Vol 111 (13) ◽  
pp. 132102 ◽  
Author(s):  
E. E. Looney ◽  
H. S. Laine ◽  
A. Youssef ◽  
M. A. Jensen ◽  
V. LaSalvia ◽  
...  
Keyword(s):  
Precipitate Dissolution ◽  
Oxygen Migration ◽  
Oxide Precipitate ◽  
Migration Enthalpy

scholarly journals Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Meng Meng ◽  
Yuanwei Sun ◽  
Yuehui Li ◽  
Qichang An ◽  
Zhenzhen Wang ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Field Effect ◽  
Essential Role ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Complex Oxides ◽  
Band Filling ◽  
Local Lattice ◽  
Oxygen Migration ◽  
Oxide Heterostructure

AbstractThe d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO3/LaTiO3 heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO3 to LaCoO3. This triggers destabilisation of the CoO6 octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO3. Tuned by the thickness of LaTiO3, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.

Changes in Microstructure of Biomedical Co-Cr-Mo-C Alloys with Solution Treating and Aging

2010 ◽  
Vol 89-91 ◽  
pp. 377-382 ◽  
Author(s):  
S. Mineta ◽  
Shigenobu Namba ◽  
Takashi Yoneda ◽  
Kyosuke Ueda ◽  
Takayuki Narushima
Keyword(s):  
Solution Treatment ◽  
Heating Time ◽  
Treatment Temperature ◽  
Vacuum Furnace ◽  
Solution Treatment Temperature ◽  
Precipitate Dissolution ◽  
Heat Treated ◽  
M23c6 Type ◽  
Type Carbide ◽  
Time Required

Microstructural changes occurring in biomedical Co-Cr-Mo alloys with three carbon levels due to solution treatment and aging were investigated. Ingots of Co-Cr-Mo alloys with three different carbon levels were prepared by vacuum furnace melting; their chemical composition was Co-28Cr-6Mo-xC (x = 0.12, 0.25 and 0.35 mass%). Precipitates were electrolytically extracted from as-cast and heat-treated alloys. An M23C6 type carbide and a phase were detected as precipitates in as-cast Co-28Cr-6Mo-0.12C alloy, and an M23C6 type carbide and an  phase (M6C-M12C type carbide) were detected in as-cast Co-28Cr-6Mo-0.25C and Co-28Cr-6Mo-0.35C alloys. Only the M23C6 type carbide was detected during solution treatment. Complete precipitate dissolution occurred in all the three alloys after solution treatment. The holding time required for complete precipitate dissolution increased with increasing carbon content and decreasing solution treatment temperature. Complete precipitate dissolution occurred in the Co-Cr-Mo-C alloys solution treated at 1523 K for 43.2 ks; they were then subjected to aging from 873 to 1473 K for a heating time up to 44.1 ks after complete precipitate dissolution in solution treatment at 1523 K for 43.2 ks. The M23C6 type carbide with a grain size of 0.1–3 m was observed after aging. A time-temperature-precipitation diagram of the M23C6 type carbide formed in the Co-28Cr-6Mo-0.25C alloy was plotted.

Oxygen migration and isotope exchange during photoassisted splitting of water vapour on TiO2-carbon mixtures

1981 ◽  
Vol 108 (3) ◽  
pp. L465-L469 ◽  
Author(s):  
Joseph Cunningham ◽  
John P.J. Tobin ◽  
Paul Meriaudeau
Keyword(s):  
Water Vapour ◽  
Isotope Exchange ◽  
Oxygen Migration

Slowing down of oxygen migration in the processes of radical oxidation and of phenanthrene phosphorescence quenching in methanol glasses at 90 K

1986 ◽  
Vol 108 (3) ◽  
pp. 373-379 ◽  
Author(s):  
E.L. Zapadinsky ◽  
V.V. Korolev ◽  
N.P. Gritsan ◽  
N.M. Bazhin ◽  
V.A. Tolkatchev
Keyword(s):  
Radical Oxidation ◽  
Phosphorescence Quenching ◽  
Slowing Down ◽  
Oxygen Migration

Effects of Carbon Concentration Upon Oxygen Precipitation in Cz Si

1987 ◽  
Vol 104 ◽  
Author(s):  
S. Hahn ◽  
M. Arst ◽  
K. N. Ritz ◽  
S. Shatas ◽  
H. J. Stein ◽  
...  
Keyword(s):  
Carbon Content ◽  
Carbon Concentration ◽  
High Carbon ◽  
High Carbon Content ◽  
Oxygen Precipitation ◽  
Oxygen Precipitate ◽  
High Carbon Concentration ◽  
Precipitation Characteristics ◽  
C Complex ◽  
Oxide Precipitate

ABSTRACTEffects of high carbon concentration upon oxygen precipitate formation in Cz silicon have been investigated by combining various furnace and rapid thermal annneals. Even though oxide precipitate density increases with increasing carbon levels, Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs ∼ 4ppma) exhibit Pendellosung fringes, indicating a strain free bulk state. Our optical microscopic data have also shown very few defect etch features inside the bulk. A model based upon a direct coupling of both SiO2 and Si-C complex formation reactions is used to explain rather unique oxygen precipitation characteristics in the high carbon content Cz Si materials.

Effects of substantial atomic-oxygen migration across silver−oxide interfaces during silver growth

2021 ◽  
pp. 150927
Author(s):  
Eunwook Jeong ◽  
Sang-Geul Lee ◽  
Jong-Seong Bae ◽  
Seung Min Yu ◽  
Seung Zeon Han ◽  
...  
Keyword(s):  
Atomic Oxygen ◽  
Silver Oxide ◽  
Oxide Interfaces ◽  
Oxygen Migration

Interface formation of epitaxial MgO/Co2MnSi(001) structures: Elemental segregation and oxygen migration

2017 ◽  
Vol 444 ◽  
pp. 383-389 ◽  
Author(s):  
Anthony McFadden ◽  
Nathaniel Wilson ◽  
Tobias Brown-Heft ◽  
Daniel Pennachio ◽  
Mihir Pendharkar ◽  
...  
Keyword(s):  
Interface Formation ◽  
Elemental Segregation ◽  
Oxygen Migration
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