High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

2007 ◽  
Vol 90 (10) ◽  
pp. 102101 ◽  
Author(s):  
Raghavasimhan Sreenivasan ◽  
Takuya Sugawara ◽  
Krishna C. Saraswat ◽  
Paul C. McIntyre
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
High Temperature Phase ◽  
Tantalum Nitride ◽  
Temperature Phase ◽  
Gate Electrode ◽  
Layer Deposition

The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum-Based Thin Films for Copper Diffusion Barrier Applications

2003 ◽  
Vol 766 ◽  
Author(s):  
Degang Cheng ◽  
Eric T. Eisenbraun
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Copper Metallization ◽  
X Ray ◽  
Layer Deposition ◽  
Electron Spectrometry

AbstractA plasma-enhanced atomic layer deposition (PEALD) process for the growth of tantalumbased compounds is employed in integration studies for advanced copper metallization on a 200- mm wafer cluster tool platform. This process employs terbutylimido tris(diethylamido)tantalum (TBTDET) as precursor and hydrogen plasma as the reducing agent at a temperature of 250°C. Auger electron spectrometry, X-ray photoelectron spectrometry, and X-ray diffraction analyses indicate that the deposited films are carbide rich, and possess electrical resistivity as low as 250νΔcm, significantly lower than that of tantalum nitride deposited by conventional ALD or CVD using TBTDET and ammonia. PEALD Ta(C)N also possesses a strong resistance to oxidation, and possesses diffusion barrier properties superior to those of thermally grown TaN.

Humidity sensitive irreversible phase transformation of an open-framework Zinc phosphate and its water-assisted high proton conduction properties

2021 ◽  
Author(s):  
Jing-Wei Yu ◽  
Hai-Jiao Yu ◽  
Qiu Ren ◽  
Jin Zhang ◽  
Yang Zou ◽  
...  
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Zinc Phosphate ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Open Framework ◽  
High Proton ◽  
Irreversible Phase Transformation ◽  
Low Temperature Phase ◽  
Conduction Properties

Open-framework zinc phosphate (NMe4)(ZnP2O8H3) undergoes irreversible phase transformation. Structural transformation with α (NMe4.Zn[HPO4][H2PO4] the low-temperature phase) and β (NMe4.ZnH3[PO4]2 the high-temperature phase) (Tc=149 °C) and conduction properties were investigated by...

Atomic Layer Deposition of Cu2SnS3 Thin Films: Effects of Composition and Heat Treatment on Phase Transformation

2021 ◽  
Author(s):  
Raphael Edem Agbenyeke ◽  
Soomin Song ◽  
Heenang Choi ◽  
Bo Keun Park ◽  
Jae Ho Yun ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Irreversible single-crystal to polycrystal and reversible single-crystal to single-crystal phase transformations in cyanurates

2001 ◽  
Vol 57 (6) ◽  
pp. 791-799 ◽  
Author(s):  
Menahem Kaftory ◽  
Mark Botoshansky ◽  
Moshe Kapon ◽  
Vitaly Shteiman
Keyword(s):  
Phase Transformation ◽  
High Temperature ◽  
Low Temperature ◽  
Single Crystal ◽  
High Temperature Phase ◽  
Monoclinic Space Group ◽  
Temperature Phase ◽  
Space Group ◽  
Reversible Phase ◽  
Low Temperature Phase

4,6-Dimethoxy-3-methyldihydrotriazine-2-one (1) undergoes a single-crystal to single-crystal reversible phase transformation at 319 K. The low-temperature phase crystallizes in monoclinic space group P21/n with two crystallographically independent molecules in the asymmetric unit. The high-temperature phase is obtained by heating a single crystal of the low-temperature phase. This phase is orthorhombic, space group Pnma, with the molecules occupying a crystallographic mirror plane. The enthalpy of the transformation is 1.34 kJ mol−1. The small energy difference between the two phases and the minimal atomic movement facilitate the single-crystal to single-crystal reversible phase transformation with no destruction of the crystal lattice. On further heating, the high-temperature phase undergoes methyl rearrangement in the solid state. 2,4,6-Trimethoxy-1,3,5-triazine (3), on the other hand, undergoes an irreversible phase transformation from single-crystal to polycrystalline material at 340 K with an enthalpy of 3.9 kJ mol−1; upon further heating it melts and methyl rearrangement takes place.

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