Atomic Layer Deposition of ZrO2 Thin Films with High Dielectric Constant on TiN Substrates

2008 ◽  
Vol 11 (3) ◽  
pp. G9 ◽  
Author(s):  
Seong Keun Kim ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High Dielectric

High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

2004 ◽  
Vol 85 (18) ◽  
pp. 4112-4114 ◽  
Author(s):  
Seong Keun Kim ◽  
Wan-Don Kim ◽  
Kyung-Min Kim ◽  
Cheol Seong Hwang ◽  
Jaehack Jeong
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Layer Deposition ◽  
High Dielectric

Synchrotron X-ray reflectivity study of high dielectric constant alumina thin films prepared by atomic layer deposition

2006 ◽  
Vol 510 (1-2) ◽  
pp. 159-163 ◽  
Author(s):  
Yongtaek Hwang ◽  
Kyuyoung Heo ◽  
Chang Hwan Chang ◽  
Man Kil Joo ◽  
Moonhor Ree
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition ◽  
High Dielectric

Atomic layer deposition of gadolinium scandate films with high dielectric constant and low leakage current

2006 ◽  
Vol 89 (13) ◽  
pp. 133512 ◽  
Author(s):  
Kyoung H. Kim ◽  
Damon B. Farmer ◽  
Jean-Sebastien M. Lehn ◽  
P. Venkateswara Rao ◽  
Roy G. Gordon
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
High Dielectric Constant ◽  
Atomic Layer ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Layer Deposition ◽  
High Dielectric

Electrical Characteristics of Stacked Titanium Oxide/Aluminum Oxide by Atomic Layer Deposition on (NH4)2 S-Treated Gaas

2012 ◽  
Vol 516-517 ◽  
pp. 1945-1948
Author(s):  
Ming Kwei Lee ◽  
Chih Feng Yen ◽  
Sheng Hsiung Yang ◽  
Jung Chan Lee ◽  
Chi Hsuan Cheng ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Leakage Currents ◽  
Mos Capacitor ◽  
Native Oxides ◽  
Layer Deposition ◽  
High Dielectric ◽  
P Type

The (NH4)2 S treatment was used for the reduction of native oxides and passivation on GaAs. Atomic layer deposited Al2O3 can further remove the residue native oxides and lower the leakage current on (NH4)2S treated GaAs from self-cleaning and high bandgap. For further stacked with high dielectric constant TiO2 also prepared by atomic layer deposition on Al2O3/(NH4)2S treated p-type GaAs MOS capacitor, the leakage currents can reach 1.9 × 10-8 and 3.1 × 10-6 A/cm2 at ± 2 MV/cm. The dielectric constant is 25.

Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis(dimethylamino)Hafnium (TDMAH) and Ozone

2003 ◽  
Vol 765 ◽  
Author(s):  
Xinye Liu ◽  
Sasangan Ramanathan ◽  
Thomas E. Seidel
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
Temperature Dependence ◽  
Deposition Rate ◽  
Hafnium Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Probe Measurements

AbstractHafnium oxide (HfO2) thin films were synthesized from tetrakis(dimethylamino) hafnium (TDMAH) and ozone (O3) by atomic layer deposition (ALD) on 200 mm silicon wafers. Gradual saturation was observed for TDMAH exposure pulse. However O3 showed better saturation behavior for O3exposure. Yet, 100% step coverage was achieved for ~100nm trenches with aspect ratio of 35. Temperature dependence of the deposition rate was studied at susceptor temperature from 160°C to 420°C. The lowest deposition rate was observed at 320°C. Mercury probe measurements indicated the dielectric constant increased from 16 to 20 as susceptor temperature increased from 200°C to 320°C. Selected comparisons with tetrakis (ethylmethylamino) hafnium (TEMAH) were also made.

Growth and Layer Characterization of SrTiO3 by Atomic Layer Deposition using Sr(tBu3Cp)2 and Ti(OMe)4

2009 ◽  
Vol 1155 ◽  
Author(s):  
Mihaela Popovici ◽  
Sven Van Elshocht ◽  
Nicolas Menou ◽  
Johan Swerts ◽  
Dieter Pierreux ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Crystalline State ◽  
Atomic Layer ◽  
Lattice Parameter ◽  
Index Of Refraction ◽  
Layer Deposition ◽  
Pulse Ratio

AbstractStrontium titanate (STO) thin films (45-67 % Sr) were deposited by atomic layer deposition using Sr(tBu3Cp)2/Ti(OMe)4/H2O as precursors. The Sr content of the layers is well controlled by the precursor pulse ratio, as indicated by Rutherford backscattering spectroscopy (RBS). The amount of Sr and Ti deposited depends on the Sr:Ti pulse ratio and indicates the enhancement of the Ti precursor reactivity in the presence of Sr-OH. STO compositions that are closer to stoichiometric SrTiO3 result in denser films with correspondingly higher index of refraction. The increase (decrease) of the Sr content over (below) 50 % leads to an expansion (contraction) of the lattice parameter corresponding to cubic SrTiO3 with a perovskite structure. The dielectric constant (extracted from film thickness series) and leakage current strongly depends both on the Sr content and the crystalline state of the films.

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