Resistive Non-Volatile Memory Effect Enhanced by a Ferroelectric Buffer Layer on Semiconductive Pr0.7Ca0.3MnO3 Film
2019 ◽
Vol 30
(16)
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pp. 15224-15235
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2011 ◽
Vol 88
(7)
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pp. 1232-1235
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2011 ◽
Vol 124
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pp. 119-124
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2015 ◽
Vol E98.A
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pp. 2494-2504
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2016 ◽
Vol 213
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pp. 2446-2451
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