The Formation and Characterisation of Lanthanum Oxide Based Si/High-k/NiSi Gate Stacks by Electron-Beam Evaporation: An Examination of In-Situ Amorphous Silicon Capping and NiSi formation

2019 ◽  
Vol 11 (4) ◽  
pp. 145-156 ◽  
Author(s):  
Paul Hurley ◽  
Mathieu Pijolat ◽  
Karim Cherkaoui ◽  
Eamon O'Connor ◽  
Dan O'Connell ◽  
...  
2005 ◽  
Vol 862 ◽  
Author(s):  
Shmyryeva Alexandra N. ◽  
Semikina Tetyana V.

AbstractThis paper presents and discusses the results of measuring IR reflection and ellipsometric parameters, optical microscopy and AFM the mixed phase of amorphous Si:Y films with microcrystalline inclusions. These films were obtained by electron-beam evaporation of siliconyttrium alloys with different Y concentration (5-30 %) at two substrate temperatures (370 and 620 °C).


Author(s):  
K. Heinemann ◽  
J.J. Metois ◽  
H. Poppa

A previously described high-resolution TEM with UHV specimen chamber (10-7 Pa range), electron beam evaporation facilities, and fast speed/low electron exposure image recording facilities (1,2) was employed to observe the mobility of small gold clusters (13 Å mean diameter) on electron-beam cleaved MgO substrates (3). A deposit of 1.3 x 1015 gold atoms/cm2 was evaporated in 60 seconds immediately following the cleavage.During the first 10 minutes following the deposition, many cluster mobility events were observed. The movements can be classified in two categories. One type of cluster mobility leads to coalescence and occurs usually within a few seconds (25 Å/s speed), see Fig.l. Whereas this kind of mobility was found to be predominant in previous cluster mobility studies of silver on amorphized graphite (4), cluster mobility leading to coalescence was only found in less than 20% of the observed mobility events for gold on (001) MgO. The majority of the cluster movements in the present system were characterized by an obvious tendency to avoid the proximity of other clusters (5).


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