Hydrogen dissociation and incorporation into amorphous silicon produced by electron beam evaporation

1989 ◽  
Vol 7 (2) ◽  
pp. 136-143 ◽  
Author(s):  
Y. Franghiadakis ◽  
P. Tzanetakis
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Electron Beam Evaporation ◽  
Hydrogen Dissociation

Optical Properties of Amorphous Silicon-Yttrium Films

2005 ◽  
Vol 862 ◽  
Author(s):  
Shmyryeva Alexandra N. ◽  
Semikina Tetyana V.
Keyword(s):  
Optical Properties ◽  
Electron Beam ◽  
Amorphous Silicon ◽  
Optical Microscopy ◽  
Electron Beam Evaporation ◽  
Mixed Phase ◽  
Ir Reflection ◽  
Substrate Temperatures

AbstractThis paper presents and discusses the results of measuring IR reflection and ellipsometric parameters, optical microscopy and AFM the mixed phase of amorphous Si:Y films with microcrystalline inclusions. These films were obtained by electron-beam evaporation of siliconyttrium alloys with different Y concentration (5-30 %) at two substrate temperatures (370 and 620 °C).

Comparison of Characteristics of Rapid Thermal and Microwave Annealed Amorphous Silicon Thin Films Prepared by Electron Beam Evaporation and Low Pressure Chemical Vapor Deposition

2013 ◽  
Vol 663 ◽  
pp. 372-376
Author(s):  
Chi Hua Hsieh ◽  
Li Te Tsou ◽  
Sheng Hao Chen ◽  
Huai Yi Chen ◽  
Yao Jen Lee ◽  
...  
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Beam Evaporation ◽  
Silicon Thin Films ◽  
Pressure Chemical ◽  
Si Films ◽  
The Cost

In this study we use chemical and physical vapor depositions to fabricate amorphous silicon (a-Si) films. We also use traditional rapid thermal annealing (RTA) and advanced microwave annealing (MWA) to activate or crystallize a-Si films and then observe their sheet resistances and crystallization. We discovered, although the cost of films fabricated by electron beam (e-beam) evaporation is relatively lower than by chemical vapor deposition (CVD), the effects of the former method are poorer whether in sheet resistance or film crystallization. In addition, only at the doping layer prepared by CVD can film crystallization degree produced by MWA match RTA.

Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

1998 ◽  
Vol 13 (7) ◽  
pp. 1795-1798 ◽  
Author(s):  
Runjin Gan ◽  
Fengmin Liu ◽  
Li Qi ◽  
Jizheng Wang
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Esr Spectra ◽  
Electron Beam Evaporation ◽  
Silicon Films ◽  
Impurity States ◽  
Doping Effects ◽  
Electron Beam Evaporation Technique ◽  
Spin Resonance ◽  
Evaporation Technique

Gd-doped amorphous silicon films have been prepared by the electron beam evaporation technique, employing the experimental methods of dc conductivity temperature properties, ESR (electron spin resonance) spectra, and optical band gap Eopt measurements. We have investigated the optical and electrical properties of the films. The results show that at 290 K < T < 330 K, hopping conduction in Gd impurity states near Fermi level is predominant, and at 330 K < T < 500 K extended state conduction dominates due to electrons exited from the impurity states. At a Gd concentration of about 1.0 at.% spin density Ns, peak-peak width ΔBpp and line-shape factor l of ESR spectra change their dependence on Gd contents. The optical gap of the films narrows with increasing Gd contents in the films from 1.68 eV to 0.42 eV. The results were explained on the basis of the partial compensation of Gd atoms for dangling bonds .

scholarly journals Comparing amorphous silicon prepared by electron-beam evaporation and sputtering toward eliminating atomic tunneling states

2021 ◽  
Vol 855 ◽  
pp. 157431
Author(s):  
Xiao Liu ◽  
Matthew R. Abernathy ◽  
Thomas H. Metcalf ◽  
Battogtokh Jugdersuren ◽  
James C. Culbertson ◽  
...  
Keyword(s):  
Electron Beam ◽  
Amorphous Silicon ◽  
Electron Beam Evaporation
Sign in / Sign up

Export Citation Format

Share Document