Characterization of leakage behaviors of high-k gate stacks by electron-beam-induced current

2008 ◽  
Author(s):  
J. Chen ◽  
T. Sekiguchi ◽  
N. Fukata ◽  
M. Takase ◽  
T. Chikyow ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Gate Stacks ◽  
High K ◽  
Electron Beam Induced Current

(Invited) An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks

2019 ◽  
Vol 28 (2) ◽  
pp. 299-313
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Naoki Fukata ◽  
Masami Takase ◽  
Yoshihiro Nemoto ◽  
...  
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Investigation ◽  
Gate Stacks ◽  
High K ◽  
Electron Beam Induced Current

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

2009 ◽  
Vol 156-158 ◽  
pp. 461-466
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Ryu Hasunuma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Microscopic Investigation ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Electrical Stress ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

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