Effects of Hydrogenated–Amorphous–Silicon Layer on the Performance of SiGe Metal–Semiconductor–Metal Photodetectors

2007 ◽  
Vol 154 (11) ◽  
pp. J365
Author(s):  
J. D. Hwang ◽  
Y. H. Chen ◽  
C. Y. Kung ◽  
J. C. Liu
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Metal Semiconductor Metal ◽  
Hydrogenated Amorphous

High-performance metal-semiconductor-metal photodetector with a thin hydrogenated amorphous silicon layer on crystalline silicon

1995 ◽  
Vol 31 (24) ◽  
pp. 2123-2124 ◽  
Author(s):  
Li-Hong Laih ◽  
Jyh-Wong Hong ◽  
Tean-Sen Jen ◽  
Rong-Heng Yuang ◽  
Wen-Chin Tsay ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
High Performance ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Metal Semiconductor Metal ◽  
Hydrogenated Amorphous

Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells

2016 ◽  
Vol 82 ◽  
pp. 122-125
Author(s):  
Youngseok Lee ◽  
Cheolmin Park ◽  
Jinjoo Park ◽  
Donghyun Oh ◽  
Youn-Jung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Thin Film Solar Cells ◽  
Hydrogenated Amorphous

Semitransparent Silicide Electrode Formed on the Surface of a-Si:H

1984 ◽  
Vol 33 ◽  
Author(s):  
T. Tsukada ◽  
K. Seki ◽  
H. Yamamoto ◽  
A. Sasano
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Metal Layer ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Transparent Electrode ◽  
Optical And Electrical Properties ◽  
Silicide Layer ◽  
Hydrogenated Amorphous

ABSTRACTThin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.

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