Semitransparent Silicide Electrode Formed on the Surface of a-Si:H

1984 ◽  
Vol 33 ◽  
Author(s):  
T. Tsukada ◽  
K. Seki ◽  
H. Yamamoto ◽  
A. Sasano
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Metal Layer ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Transparent Electrode ◽  
Optical And Electrical Properties ◽  
Silicide Layer ◽  
Hydrogenated Amorphous

ABSTRACTThin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.

scholarly journals Impact of deposition of indium tin oxide double layers on hydrogenated amorphous silicon/crystalline silicon heterojunction

AIP Advances ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 065008
Author(s):  
Masanori Semma ◽  
Kazuhiro Gotoh ◽  
Markus Wilde ◽  
Shohei Ogura ◽  
Yasuyoshi Kurokawa ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Double Layers ◽  
Hydrogenated Amorphous

Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon P-I-N Diodes

2003 ◽  
Vol 762 ◽  
Author(s):  
Todd R. Johnson ◽  
Gautam Ganguly ◽  
George S. Wood ◽  
David E. Carlson
Keyword(s):  
Zinc Oxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Tin Oxide ◽  
Reverse Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Cell Area ◽  
Leakage Currents ◽  
Single Junction ◽  
Hydrogenated Amorphous

AbstractExcess leakage currents under reverse bias (known as shunting) and spontaneous reductions of this excess leakage under increased reverse bias (known as curing) were investigated in hydrogenated amorphous silicon (a-Si:H) based single junction p-i-n type diodes. An increase in the frequency of shunting was observed when the front contacts were switched from tin oxide to zinc oxide, most likely due to defects in the previously deposited zinc oxide coated glass was observed. Storage in the dark and light soaking up to 100 hours were both observed to independently increase the leakage current in previously leaking diodes. Models for the distribution of shunt-causing defects within a given cell area were considered. Comparing the measured frequency of shunting using cells of varying area (1 to 16 mm2) to the models' predictions indicate a distribution of point defects separated by relatively large average distances that are slightly larger for tin oxide (5-6 mm) than for zinc oxide (4 mm).

Influence of film thickness on optical and electrical properties of hydrogenated amorphous silicon

1987 ◽  
Vol 150 (1) ◽  
pp. 1-9 ◽  
Author(s):  
F. Demichelis ◽  
G. Kaniadakis ◽  
E. Mezzetti ◽  
P. Mpawenayo ◽  
A. Tagliaferro ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical And Electrical Properties ◽  
Hydrogenated Amorphous

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells

2016 ◽  
Vol 82 ◽  
pp. 122-125
Author(s):  
Youngseok Lee ◽  
Cheolmin Park ◽  
Jinjoo Park ◽  
Donghyun Oh ◽  
Youn-Jung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Thin Film Solar Cells ◽  
Hydrogenated Amorphous
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