High-performance metal-semiconductor-metal photodetector with a thin hydrogenated amorphous silicon layer on crystalline silicon

1995 ◽  
Vol 31 (24) ◽  
pp. 2123-2124 ◽  
Author(s):  
Li-Hong Laih ◽  
Jyh-Wong Hong ◽  
Tean-Sen Jen ◽  
Rong-Heng Yuang ◽  
Wen-Chin Tsay ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
High Performance ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Metal Semiconductor Metal ◽  
Hydrogenated Amorphous

scholarly journals High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

Hall-Effect and Sign Properties in Hydrogenated Amorphous and Disordered Crystalline Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
C. E. Nebel ◽  
M. Rother ◽  
C. Summonte ◽  
M. Heintze ◽  
M. Stutzmann
Keyword(s):  
Hall Effect ◽  
Amorphous Silicon ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Small Volume Fraction ◽  
Phosphorus Doped ◽  
Hydrogenated Amorphous ◽  
Defect Densities ◽  
Very High

AbstractHall experiments on a series of microcrystalline, microcrystalline-amorphous, amorphous and crystalline silicon samples with varying defect densities are presented and discussed. Normal Hall effect signatures on boron and phosphorus doped hydrogenated amorphous silicon are detected. We interpret these results to be due to a small volume fraction of nanocrystalline Si, which falls below the detection limits of Raman experiments. Hydrogenated amorphous silicon, prepared under conditions far away from microcrystalline growth, shows the known double sign anomaly, Sign reversals in c-Si, where the disorder is increased by Si implantation up to very high levels, could not be detected.

High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung Ho Kim ◽  
Yuriy Vygranenko ◽  
Mark Bedzyk ◽  
Jeff Hsin Chang ◽  
Tsu Chiang Chuang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
High Performance ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Plastic Substrate ◽  
Process Conditions ◽  
Plastic Substrates ◽  
Hydrogenated Amorphous

AbstractWe report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

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