Physics-Based Percolation Model of Oxide Breakdown

2019 ◽  
Vol 8 (1) ◽  
pp. 177-183
Author(s):  
Jordi Sune ◽  
Ernest Wu ◽  
Santi Tous
Keyword(s):  
Percolation Model ◽  
Oxide Breakdown

A Model for the Set Statistics of RRAM Inspired in the Percolation Model of Oxide Breakdown

2013 ◽  
Vol 34 (8) ◽  
pp. 999-1001 ◽  
Author(s):  
Shibing Long ◽  
Xiaojuan Lian ◽  
Carlo Cagli ◽  
Luca Perniola ◽  
Enrique Miranda ◽  
...  
Keyword(s):  
Percolation Model ◽  
Oxide Breakdown

A physics-based deconstruction of the percolation model of oxide breakdown

2007 ◽  
Vol 84 (9-10) ◽  
pp. 1917-1920 ◽  
Author(s):  
J. Suñé ◽  
E.Y. Wu ◽  
S. Tous
Keyword(s):  
Percolation Model ◽  
Oxide Breakdown

A Study of Pad Contamination Defect and Removal

2008 ◽  
Author(s):  
K.A. Mohammad ◽  
L.J. Liu ◽  
S.F. Liew ◽  
S.F. Chong ◽  
D.G. Lee ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Oxide ◽  
Action Plans ◽  
Preventive Action ◽  
Oxide Breakdown ◽  
Reliability Level ◽  
The Future ◽  
Dry Etch ◽  
Removal Technique

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

scholarly journals Effect of Hydrophobic Silica Nanochannel Structure on the Running Speed of a Colloidal Damper

2021 ◽  
Vol 11 (15) ◽  
pp. 6808
Author(s):  
Gengbiao Chen ◽  
Zhiwen Liu
Keyword(s):  
Fractal Dimension ◽  
Silica Gel ◽  
Fractal Theory ◽  
Percolation Model ◽  
Silica Gels ◽  
Practical Significance ◽  
Running Speed ◽  
Fractal Percolation ◽  
Micropore Structure ◽  
Hydrophobic Silica

A colloidal damper (CD) can dissipate a significant amount of vibrations and impact energy owing to the interface power that is generated when it is used. It is of great practical significance to study the influence of the nanochannel structure of hydrophobic silica gel in the CD damping medium on the running speed of the CD. The fractal theory was applied to observe the characteristics of the micropore structure of the hydrophobic silica gel by scanning electron microscopy (SEM), the primary particles were selected to carry out fractal analysis, and the two-dimensional fractal dimension of the pore area and the tortuous fractal dimension of the hydrophobic silica gel pore structure were calculated. The fractal percolation model of water in hydrophobic silica nanochannels based on the slip theory could thus be obtained. This model revealed the relationship between the micropore structure parameters of the silica gel and the running speed of the CD. The CD running speed increases with the addition of grafted molecules and the reduction in pore size of the silica gel particles. Continuous loading velocity testing of the CD loaded with hydrophobic silica gels with different pore structures was conducted. By comparing the experimental results with the calculation results of the fractal percolation model, it was determined that the fractal percolation model can better characterize the change trend of the CD running velocity for the first loading, but the fractal dimension was changed from the second loading, caused by the small amount of water retained in the nanochannel, leading to the failure of fractal characterization.

Sign in / Sign up

Export Citation Format

Share Document