Dynamic Threshold Switching Behavior of Ge[sub 2]Sb[sub 2]Te[sub 5] and Sb-doped Ge[sub 2]Sb[sub 2]Te[sub 5] Thin Films Using Scanning Electrical Nanoprobe

2007 ◽  
Vol 10 (9) ◽  
pp. H281 ◽  
Author(s):  
P. Zhou ◽  
Y. C. Shin ◽  
B. J. Choi ◽  
S. Choi ◽  
C. S. Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Switching Behavior ◽  
Dynamic Threshold ◽  
Threshold Switching

Turning electrical switching behaviors in WOx thin films by thickness

2019 ◽  
Vol 12 (01) ◽  
pp. 1850107
Author(s):  
Weijie Duan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Dynamic Evolution ◽  
Behavior Changes ◽  
Electrical Switching ◽  
Threshold Switching ◽  
Highly Sensitive

The tunability of electrical switching behaviors in WOx thin films were investigated in this paper. Electrical responses of the WOx films were observed to be highly sensitive to the film thickness. As the film thickness increases from 50 to 100[Formula: see text]nm, the switching behavior changes from complementary resistive switching (CRS) to threshold switching (TS). A defect-related dynamic evolution of filament is responsible for the switching behavior. Such a controllable electrical switching can well broaden the application of the WOx thin film.

scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Behaviour ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Switching Behaviour

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

Scaling behavior of oxide-based electrothermal threshold switching devices

Nanoscale ◽  
2017 ◽  
Vol 9 (37) ◽  
pp. 14139-14148 ◽  
Author(s):  
Dasheng Li ◽  
Jonathan M. Goodwill ◽  
James A. Bain ◽  
Marek Skowronski
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Scaling Behavior ◽  
Switching Behavior ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Devices

Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

2019 ◽  
Vol 14 (5) ◽  
pp. 1900548 ◽  
Author(s):  
Anthonin Verdy ◽  
Francesco d'Acapito ◽  
Jean-Baptiste Dory ◽  
Gabriele Navarro ◽  
Mathieu Bernard ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conduction ◽  
Amorphous Structure ◽  
Threshold Switching

scholarly journals Bidirectional-nonlinear threshold switching behaviors and thermally robust stability of ZnTe selectors by nitrogen annealing

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Gabriel Jang ◽  
Mihyun Park ◽  
Da Seul Hyeon ◽  
WooJong Kim ◽  
JungYup Yang ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Annealing Treatment ◽  
Memory Storage ◽  
Switching Behavior ◽  
Switching Speed ◽  
Conduction Model ◽  
Ultra Low Power ◽  
Threshold Switching ◽  
Nitrogen Annealing ◽  
Chalcogenide Materials

Abstract Three-dimensional stackable memory frames involving the integration of two-terminal scalable crossbar arrays are expected to meet the demand for high-density memory storage, fast switching speed, and ultra-low power operation. However, two-terminal crossbar arrays introduce an unintended sneak path, which inevitably requires bidirectional nonlinear selectors. In this study, the advanced threshold switching (TS) features of ZnTe chalcogenide material-based selectors provide bidirectional threshold switching behavior, nonlinearity of 104, switching speed of less than 100 ns, and switching endurance of more than 107. In addition, thermally robust ZnTe selectors (up to 400 ℃) can be obtained through the use of nitrogen-annealing treatment. This process can prevent possible phase separation phenomena observed in generic chalcogenide materials during thermal annealing which occurs even at a low temperature of 250 ℃. The possible characteristics of the electrically and thermally advanced TS nature are described by diverse structural and electrical analyses through the Poole–Frankel conduction model.

Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

2018 ◽  
Vol 6 (18) ◽  
pp. 5025-5032 ◽  
Author(s):  
Sijung Yoo ◽  
Chanyoung Yoo ◽  
Eui-Sang Park ◽  
Woohyun Kim ◽  
Yoon Kyeung Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Switching Behavior ◽  
Chemical Interactions ◽  
Threshold Switching ◽  
Layer Deposition

Ge–Sb–Se–Te quaternary films were prepared through atomic layer deposition (ALD) for ovonic threshold switching (OTS) applications.

scholarly journals Composition tunable memory and threshold switching in Al20AsxTe80−x semiconducting glasses

1998 ◽  
Vol 13 (10) ◽  
pp. 2982-2987 ◽  
Author(s):  
S. Murugavel ◽  
S. Asokan
Keyword(s):  
Composition Range ◽  
Thickness Dependence ◽  
Lower Threshold ◽  
Switching Behavior ◽  
Structural Studies ◽  
Threshold Behavior ◽  
Threshold Switching ◽  
Threshold Voltages

I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

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