Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films

2019 ◽  
Vol 14 (5) ◽  
pp. 1900548 ◽  
Author(s):  
Anthonin Verdy ◽  
Francesco d'Acapito ◽  
Jean-Baptiste Dory ◽  
Gabriele Navarro ◽  
Mathieu Bernard ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conduction ◽  
Amorphous Structure ◽  
Threshold Switching

Electrical Conduction of Superatom Thin Films Composed of Group-V-Metal-Encapsulating Silicon-Cage Nanoclusters

2021 ◽  
Author(s):  
Takaho Yokoyama ◽  
Tatsuya Chiba ◽  
Naoyuki Hirata ◽  
Masahiro Shibuta ◽  
Atsushi Nakajima
Keyword(s):  
Thin Films ◽  
Electrical Conduction ◽  
Group V

scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Behaviour ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Switching Behaviour

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

scholarly journals A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 118 ◽  
Author(s):  
Ho-Yun Lee ◽  
Chi-Wei He ◽  
Ying-Chieh Lee ◽  
Da-Chuan Wu
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Annealing Temperature ◽  
Phase Evolution ◽  
Amorphous Structure ◽  
X Ray Diffraction ◽  
Temperature Coefficient Of Resistance ◽  
X Ray ◽  
Transmission Electronmicroscopy ◽  
Scanning Electron

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

scholarly journals PREPARATION OF POLY (METHYL METHACRYLATE) THIN FILMS BY SPIN COATING TECHNIQUE FOR OTFT AND WOUND HEALING APPLICATIONS

2018 ◽  
Vol 5 (1) ◽  
pp. 20-22
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundari C ◽  
Punithavathi K
Keyword(s):  
Thin Films ◽  
Methyl Methacrylate ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Amorphous Structure ◽  
Spin Coating Technique ◽  
Prepared Film ◽  
Poly Methyl Methacrylate ◽  
Coating Technique ◽  
Glass Slides

Thin films of poly (methyl methacrylate) (PMMA) were prepared on cleaned glass slides by using spin coating technique. The prepared films were identified by using FTIR spectrum. Surface morphology of the coated films was studied by using SEM and AFM. Both as grown and annealed films showed smooth and amorphous structure. It also revealed the absence of pits, pin holes and dendritic features in the surface. Both as grown and annealed films showed very low RMS roughness value. The morphology analysis revealed that the prepared film could be used as dielectric layer in thin film transistors and as drug delivery system forwound healing.

Structural and electronic properties of pentacene/pentacenequinone thin films prepared by Langmuir–Blodgett technique

2009 ◽  
Vol 74 (4) ◽  
pp. 565-579
Author(s):  
Martin Weis ◽  
Katarína Gmucová ◽  
Daniel Haško ◽  
Jarmila Müllerová
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Electrochemical Techniques ◽  
Energy Band Diagram ◽  
Amorphous Structure ◽  
Metallic Surface ◽  
Amorphous Thin Films ◽  
Langmuir Blodgett ◽  
Structural And Electronic Properties ◽  
Langmuir Blodgett Films

Structural and electronic properties of pentacene/pentacenequinone thin films prepared on various solid-state substrates by the Langmuir–Blodgett technique are reported. Amorphous structure of the prepared films has been proved by XRD measurements. Oxygen-related defects have been identified in the Langmuir–Blodgett films as a consequence of the exposure of pentacene Langmuir layer to air. Crystallization induced by thermal treatment of the prepared amorphous thin films has been observed. Electronic properties of pentacene/ pentacenequinone Langmuir–Blodgett films have been investigated in the contact-less architecture using electrochemical techniques. The energy band diagram of the amorphous pentacene/pentacenequinone Langmuir–Blodgett film on a metallic surface was constructed from the obtained electrochemical data.

Sign in / Sign up

Export Citation Format

Share Document