scholarly journals Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Electrical Behaviour ◽  
Electrical Measurements ◽  
Threshold Switching ◽  
Switching Behaviour

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.

scholarly journals Circular economy of ITO thin films deposited on glass obtained from degraded OLED devices

2021 ◽  
Vol 40 (1) ◽  
Author(s):  
Emerson Roberto Santos ◽  
Lucas Henrique Silva de Jesus ◽  
Elvo Calixto Burini Junior ◽  
Roberto Koji Onmori ◽  
Wang Shu Hui
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Indium Tin Oxide ◽  
Circular Economy ◽  
Electrical Resistance ◽  
Layer By Layer ◽  
Electrical Measurements ◽  
Light Emitting ◽  
Ito Glass ◽  
Ito Thin Films

In this work, circular economy was investigated for commercial indium tin oxide (ITO) thin films deposited on glass substrates obtained from degraded organic light-emitting diodes (OLED). These devices were assembled and polarized at laboratory in a previous work. For each substrate, with geometry 2.5 × 2.5 cm, four OLEDs with active area of 3 × 3 mm were set up. These OLED devices were assembled with ITO as the electrode anode and successive depositions of other materials (layer-by-layer), to form the complete structure. To obtain the recovered ITO, all layers were removed from the samples containing the OLEDs previously mounted, remaining only the ITO thin films, that were cleaned with commercial product together with the received ITO/glass samples. Both samples were compared using some techniques, such as: colorimetry, electrical resistance, and Raman spectroscopy. A methodology with light-emitting diode (LED) device polarized emitting light crossing the ITO thin films was used, and the luminance with chromaticity coordinates was obtained, revealing the good transparency of the thin films. Electrical resistance of recovered ITO revealed five higher orders of magnitude in comparison to the one of received ITO. This fact can be tributed to a poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS) layer, causing corrosion of the ITO thin films during the assembly of OLEDs or loss of the field lines created during the electrical measurements by probes of four-point probe. Raman spectroscopy did not show satisfactory results in the chemical composition analyses of the samples, but it indicated good cleaning process of the samples before the analyses.

Investigation on C54 nucleation and growth by micro-Raman imaging

2000 ◽  
Vol 611 ◽  
Author(s):  
Stefania Privitera ◽  
Francesco Meinardi ◽  
Simona Quilici ◽  
Francesco La Via ◽  
Corrado Spinella ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Size Distribution ◽  
Raman Spectra ◽  
Nucleation Rate ◽  
Growth Velocity ◽  
Annealing Time ◽  
Nucleation And Growth ◽  
Electrical Measurements ◽  
Micro Raman Spectroscopy

ABSTRACTThe processes of nucleation and growth of the C54 TiSi2 phase into the C49 phase in thin films have been studied by electrical measurements and micro-Raman spectroscopy. The Raman spectra have been acquired scanning large silicide areas (100×50 μm2) in step of 0.5 μm. Images showing the evolution of the C54 grains during the transition have been obtained for temperatures between 680 and 720 °C and the transformed fraction, the density and the size distribution of the C54 grains have been measured as a function of the temperature and the annealing time. The activation energies for the nucleation rate and the growth velocity have been determined obtaining values of 4.9 ± 0.7 eV and 4.5 ± 0.9 eV, respectively.

scholarly journals Correction: Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2

2021 ◽  
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Switching Behaviour

Correction for ‘Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2’ by Jonas Keukelier et al., J. Mater. Chem. C, 2021, DOI: 10.1039/d0tc04086j.

Enhanced waveguide Raman spectroscopy with thin films. Plenary lecture

The Analyst ◽  
1994 ◽  
Vol 119 (4) ◽  
pp. 491 ◽  
Author(s):  
S. Ellahi ◽  
R. E. Hester
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Plenary Lecture

scholarly journals Structural Changes in Doped Ge2Sb2Te5 Thin Films Studied by Raman Spectroscopy

2013 ◽  
Vol 44 ◽  
pp. 82-90 ◽  
Author(s):  
S. Kozyukhin ◽  
M. Veres ◽  
H.P. Nguyen ◽  
A. Ingram ◽  
V. Kudoyarova
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Changes

Broadband Coherent Anti-Stokes Raman Spectroscopy Characterization of Polymer Thin Films

2006 ◽  
Vol 60 (10) ◽  
pp. 1097-1102 ◽  
Author(s):  
Zachary D. Schultz ◽  
Marc C. Gurau ◽  
Lee J. Richter
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Polymer Thin Films ◽  
Anti Stokes

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Structure disorder degree of polysilicon thin films grown by different processing: Constant C from Raman spectroscopy

2013 ◽  
Vol 114 (18) ◽  
pp. 183504 ◽  
Author(s):  
Quan Wang ◽  
Yanmin Zhang ◽  
Ran Hu ◽  
Daohan Ge ◽  
Naifei Ren
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structure Disorder ◽  
Disorder Degree

Laser Induced Oxidation Effects in Bismuth Thin Films

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Laser Irradiation ◽  
Raman Spectra ◽  
Exposure Time ◽  
Oxidation Process ◽  
Energy Dispersion Spectroscopy ◽  
Irradiation Power ◽  
Pure Bismuth ◽  
532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

Raman spectroscopy of CuInSe2 thin films prepared by selenization

2003 ◽  
Vol 64 (9-10) ◽  
pp. 1989-1993 ◽  
Author(s):  
E.P. Zaretskaya ◽  
V.F. Gremenok ◽  
V. Riede ◽  
W. Schmitz ◽  
K. Bente ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy
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