Investigations of Work Function Shift in Lanthanum Silicate High-K Dielectric MIS Capacitors

2019 ◽  
Vol 6 (1) ◽  
pp. 149-156
Author(s):  
Jesse S. Jur ◽  
Daniel Lichtenwalner ◽  
Angus Kingon
Keyword(s):  
Work Function ◽  
High K ◽  
High K Dielectric ◽  
Mis Capacitors ◽  
Lanthanum Silicate

Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric

2019 ◽  
Vol 3 (3) ◽  
pp. 245-252 ◽  
Author(s):  
Dan Lichtenwalner ◽  
Jesse S. Jur ◽  
Angus I. Kingon ◽  
Steven Novak ◽  
Veena Misra
Keyword(s):  
High K ◽  
High K Dielectric ◽  
Stability Issues ◽  
Lanthanum Silicate

4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric

2005 ◽  
Vol 483-485 ◽  
pp. 713-716 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Phillippe Godignon ◽  
Narcis Mestres ◽  
Josep Montserrat ◽  
José Millan
Keyword(s):  
Dielectric Constant ◽  
Dielectric Layer ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Gate Insulator ◽  
High K ◽  
Dry Oxidation ◽  
High K Dielectric ◽  
Si Films ◽  
Mis Capacitors

Oxidized Ta2Si layers have been used as high-k dielectric layer for 4H-SiC MOSFETs. The gate insulator was grown by dry oxidation of 40nm deposited Ta2Si during 1h at 1050oC. The dielectric constant obtained from 4H-SiC MIS capacitors is ~20 with an insulator thickness of 150nm. These devices exhibit adequate subthreshold, saturation and drive characteristics. For the MOSFETs fabricated on a p-implanted and annealed region, a peak mobility up to 45cm2/Vs has been extracted. The specific on-resistance of this device is 29mW·cm2 at room temperature with VDS=0.2V and VGS=14V.

Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications

2010 ◽  
Vol 1250 ◽  
Author(s):  
Panagiotis Dimitrakis ◽  
Vassilios Ioannou-Sougleridis ◽  
Pascal Normand ◽  
Caroline Bonafos ◽  
Sylvie Schamm ◽  
...  
Keyword(s):  
Ion Beam ◽  
Differential Resistance ◽  
Furnace Annealing ◽  
High K ◽  
Before And After ◽  
Nitrogen Annealing ◽  
High K Dielectric ◽  
Memory Applications ◽  
Mis Capacitors ◽  
Storage Properties

AbstractIn this paper, the fabrication of Ge-NCs embedded in Al2O3 and HfO2 layers by ion-beam-synthesis for memory applications is investigated. Structural properties of the high-k layers before and after implantation and annealing were studied by TEM observation and EELs analysis. Spherical Ge-NCs 5nm in diameter were observed in Al2O3 implanted layers after furnace annealing at 800°C in nitrogen. Annealing studies in the range 700-1050°C in nitrogen revealed the evolution of the charge storage properties of these structures utilizing MIS capacitors test structures. No NCs were observed in HfO2 implanted layers. However, significant negative-differential-resistance regions were observed in I-V characteristics of the related MIS structures. These may be attributed to the formation of conductive paths made of hafnium germanide (HfGe2) or hafnium germanate (HfGeO) regions.

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