Flame Emission Analysis for Sodium in Silicon Oxide Films and on Silicon Surfaces

1969 ◽  
Vol 116 (2) ◽  
pp. 257 ◽  
Author(s):  
J. E. Barry ◽  
H. M. Donega ◽  
T. E. Burgess
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Emission Analysis ◽  
Flame Emission

Passivation of Silicon Surfaces by Formation of Thin Silicon Oxide Films Formed by Combination of Induction-Coupled Remote Oxygen Plasma with High Pressure H2O Vapor Heat Treatment

2012 ◽  
Vol 1426 ◽  
pp. 289-294
Author(s):  
H. Abe ◽  
S. Yoshidomi ◽  
Y. Nagatomi ◽  
M. Hasumi ◽  
T. Sameshima
Keyword(s):  
Heat Treatment ◽  
High Pressure ◽  
Low Temperature ◽  
Oxygen Plasma ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Radical ◽  
Silicon Surfaces ◽  
Light Illumination ◽  
Thin Silicon

ABSTRACTWe report formation of thin silicon oxide films on the silicon surfaces by combination of oxygen radical and high pressure H2O vapor heat treatment for passivation of silicon surfaces at a low temperature. Oxygen plasma was generated by 13.56 MHz radio frequency induction-coupled remote plasma with mixed gases of O2 and Ar at 2 sccm, 2x10-2 Pa and at a power of 50 W. Oxygen radical was produced from the plasma via a metal mesh closing plasma in the reactor. The top surfaces of 20 Wcm n-type silicon substrates with the rear surface coated by thermally grown SiO2 layers were exposed by oxygen radical from 1 to 5 min to oxidize the silicon surface. The samples were subsequently annealed with 9.0x105 Pa H2O vapor heat treatment at 260oC for 3 h. The effective minority carrier lifetime estimated using photo-induced carrier microwave absorption system in the case of 635 nm light illumination at 1.5 mW/cm2 to the top surface increased from 1.3x10-4 to 5.1x10-4s as the oxygen radical treatment duration increased from 1 to 5 min. The recombination velocity decreased from 380 to 90 cm/s. 500 kHz capacitance response with bias gate voltages characteristics of metal oxide semiconductor structure resulted in the effective oxide thicknesses (EOT) ranging from 1.3 to 1.7 nm. These results indicate a capability of thin oxide formation and effective passivation of silicon surfaces at a low temperature.

The Composition and Properties of PECVD Silicon Oxide Films

1985 ◽  
Vol 132 (8) ◽  
pp. 2012-2019 ◽  
Author(s):  
P. Pan ◽  
L. A. Nesbit ◽  
R. W. Douse ◽  
R. T. Gleason
Keyword(s):  
Silicon Oxide ◽  
Oxide Films

The Effect of a Silicon-Boron Phase on Thermally Grown Silicon Oxide Films

1970 ◽  
Vol 117 (2) ◽  
pp. 272 ◽  
Author(s):  
William A. FitzGibbons ◽  
Thomas Kloffenstein ◽  
Karl M. Busen
Keyword(s):  
Silicon Oxide ◽  
Oxide Films ◽  
Thermally Grown

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

scholarly journals Electron Beam Effects on Silicon Oxide Films – Structure and Electrical Properties

2018 ◽  
Vol 24 (S1) ◽  
pp. 1810-1811 ◽  
Author(s):  
Krishna Kanth Neelisetty ◽  
Sebastian Gutsch ◽  
Falk von Seggern ◽  
Alan Molinari ◽  
Alexander Vahl ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Silicon Oxide ◽  
Oxide Films
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