Optimization of Anodic Silicon Oxide Films for Low Temperature Passivation of Silicon Surfaces

1993 ◽  
Vol 140 (1) ◽  
pp. 188-194 ◽  
Author(s):  
G. Mende ◽  
H. Flietner ◽  
M. Deutscher
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Silicon Surfaces

Passivation of Silicon Surfaces by Formation of Thin Silicon Oxide Films Formed by Combination of Induction-Coupled Remote Oxygen Plasma with High Pressure H2O Vapor Heat Treatment

2012 ◽  
Vol 1426 ◽  
pp. 289-294
Author(s):  
H. Abe ◽  
S. Yoshidomi ◽  
Y. Nagatomi ◽  
M. Hasumi ◽  
T. Sameshima
Keyword(s):  
Heat Treatment ◽  
High Pressure ◽  
Low Temperature ◽  
Oxygen Plasma ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Oxygen Radical ◽  
Silicon Surfaces ◽  
Light Illumination ◽  
Thin Silicon

ABSTRACTWe report formation of thin silicon oxide films on the silicon surfaces by combination of oxygen radical and high pressure H2O vapor heat treatment for passivation of silicon surfaces at a low temperature. Oxygen plasma was generated by 13.56 MHz radio frequency induction-coupled remote plasma with mixed gases of O2 and Ar at 2 sccm, 2x10-2 Pa and at a power of 50 W. Oxygen radical was produced from the plasma via a metal mesh closing plasma in the reactor. The top surfaces of 20 Wcm n-type silicon substrates with the rear surface coated by thermally grown SiO2 layers were exposed by oxygen radical from 1 to 5 min to oxidize the silicon surface. The samples were subsequently annealed with 9.0x105 Pa H2O vapor heat treatment at 260oC for 3 h. The effective minority carrier lifetime estimated using photo-induced carrier microwave absorption system in the case of 635 nm light illumination at 1.5 mW/cm2 to the top surface increased from 1.3x10-4 to 5.1x10-4s as the oxygen radical treatment duration increased from 1 to 5 min. The recombination velocity decreased from 380 to 90 cm/s. 500 kHz capacitance response with bias gate voltages characteristics of metal oxide semiconductor structure resulted in the effective oxide thicknesses (EOT) ranging from 1.3 to 1.7 nm. These results indicate a capability of thin oxide formation and effective passivation of silicon surfaces at a low temperature.

The Deposition of Silicon Oxide Films by LPCVD at Temperatures as Low as 100°C from a New Liquid Source

1992 ◽  
Vol 282 ◽  
Author(s):  
K. Hochberg ◽  
David A. Roberts
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Temperature Sensitive ◽  
Oxide Layers ◽  
Low Temperature Deposition ◽  
Liquid Source ◽  
Temperature Deposition ◽  
Higher Temperature

ABSTRACTA precursor for the LPCVD of silicon oxide films has been developed that extends the low temperature deposition range to 100°C. The chemical, 1,4 disilabutane (DSB), produces silicon oxide depositions similar to those of the higher temperature silane and diethylsilane (DES) processes. Optimum DSB processes require pressures below 300 mTorr, similar to silane, in contrast to DES pressures above 600 mTorr at 350°C. This results in poorer conformalities than those of DES, but the step coverages are still superior to those from silane oxides. The DSB films are low stress, carbon-free oxide layers that are suitable for temperature-sensitive underlayers and substrates such as photoresist, plastics, GaAs, and HgCdTe.

Low-temperature silicon oxide films deposited using a CO2 laser

1992 ◽  
Vol 54 ◽  
pp. 112-116 ◽  
Author(s):  
D. Fernández ◽  
P. González ◽  
J. Pou ◽  
B. León ◽  
M. Pérez-Amor
Keyword(s):  
Low Temperature ◽  
Co2 Laser ◽  
Silicon Oxide ◽  
Oxide Films
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