Determination of the Etch Rate and the Refractive Index of Silicon Nitride Films with an Ellipsometer

1968 ◽  
Vol 115 (2) ◽  
pp. 227 ◽  
Author(s):  
A. N. Saxena ◽  
O. Tkal
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Etch Rate ◽  
Silicon Nitride Films

Correlation Between The Mechanical Stress And Microstructure In Reactive Bias Magnetron Sputtered Silicon Nitride Films

1997 ◽  
Vol 505 ◽  
Author(s):  
Joo Han Kim ◽  
Won Sang Lee ◽  
Ki Woong Chunga
Keyword(s):  
Silicon Nitride ◽  
Mechanical Stress ◽  
Bias Voltage ◽  
Etch Rate ◽  
Rutherford Backscattering Spectrometry ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Silicon Nitride Films ◽  
Transmission Electron ◽  
Bombardment Energy

ABSTRACTThe influence of ion bombardment on the mechanical stress and microstructure of sputtered silicon nitride (SiNx) films has been systematically investigated. Applied substrate bias voltage was used to control the bombardment energy in a radio frequency (rf) reactive magnetron sputtering system. The resultant films were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR), Rutherford backscattering spectrometry (RBS), stress and chemical etch rate measurements. As the bias voltage was increased, the internal stress in SiNx films became increasingly compressive and reached a value of about 18.3 × 109 dyne/cm2 at higher bias voltages. These correlated well with the transition of the film microstructure from a porous microcolumnar structure containing large void to the more densely packed one. The obtained results can be explained in terms of atomic peening by energetic particles, leading to densification of the microstructure. It was also found that the amount of argon incorporated in the film is increased with increasing bias voltage, whereas the oxygen content is decreased. The lowest etch rate in buffered HF solution, approximately 1.2 Å/sec, was observed with the application of a substrate bias of -50 V.

scholarly journals Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

2016 ◽  
Vol 120 (14) ◽  
pp. 145305 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
R. Serna ◽  
F. Cabello ◽  
E. Haro-Poniatowski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Si Quantum Dots

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
M. Landa ◽  
A. Heredia
Keyword(s):  
Hydrogen Bonding ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Etch Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Quantitative Results ◽  
Deposited Films

AbstractWe have studied silicon nitride films a-SiN:H deposited at a substrate temperature of 350°C by means of the Low frequency (LF) PECVD from silane and nitrogen as stock gases. Film properties as hydrogen bonding and content, nitrogen content, refractive index and etch rate are reported and analyzed. Our deposited films show physical properties similar to those that are obtained deposition temperatures of 700°C by the low pressure chemical vapor deposition (LPCVD) technique. An investigation of bonding structures for the deposited films was performed, and quantitative results for hydrogen bonding based on Fourier Transform Infrared (FTIR) analysis are presented. It was observed that low hydrogen content in the films is in good correlation with low etch rate in 10% buffered HF solution, therefore these films present a material with good etch selectivity in respect to others materials (as phosphosilicate glass PSG, Al etc). Selectivity which makes these films very promising in surface micromachining for fabrication of sensors and device structures, e.g. microbolometers. Additionally, the Si-N bond at 830-840cm-1was analyzed because of its big absorption produced at 12μm; therefore these films can be used as absorber layers in uncooled microbolometres.

Hydrogen in RF Reactive Magnetron Sputtered Silicon Nitride Films

1992 ◽  
Vol 284 ◽  
Author(s):  
Chi-Hsien Lin ◽  
J. B. Wachtman ◽  
G. H. Sigel ◽  
R. L. Pfeffer ◽  
T. P. Monahan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Etch Rate ◽  
Hydrogen Gas ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Reactive Magnetron ◽  
Diffusion Behavior ◽  
Silicon Nitride Films ◽  
Silicon Target ◽  
Secondary Ion

ABSTRACTABSTRACT: Silicon nitride films (a-SixN1−x:H) have been prepared by rf reactive magnetron sputtering from a silicon target in a mixture gas of Ar, N2, and H2. The effects of the presence of hydrogen gas have been related to the refractive index, deposition rate, etch rate, and the Si-H and N-H bonding in the films. Hydrogen contents were measured by a quadrupole secondary ion mass spectrometer (SIMS) using deuterium implanted samples as reference standards. The deuterium implanted samples were annealed at 900°C for various periods of time to study the diffusion behavior of deuterium and hydrogen in a Si-rich and a nearly stoichiometric silicon nitride film.

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