Refractive index control of silicon nitride films prepared by radio-frequency reactive sputtering

2002 ◽  
Vol 20 (6) ◽  
pp. 2137 ◽  
Author(s):  
P. S. Nayar
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Radio Frequency ◽  
Reactive Sputtering ◽  
Silicon Nitride Films

Tuning silicon nitride refractive index through radio-frequency sputtering power

2021 ◽  
pp. 138951
Author(s):  
Daniela De Luca ◽  
Emiliano Di Gennaro ◽  
Davide De Maio ◽  
Carmine D’Alessandro ◽  
Antonio Caldarelli ◽  
...  
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Radio Frequency ◽  
Radio Frequency Sputtering ◽  
Sputtering Power

scholarly journals Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots

2016 ◽  
Vol 120 (14) ◽  
pp. 145305 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
R. Serna ◽  
F. Cabello ◽  
E. Haro-Poniatowski ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Refractive Index ◽  
Silicon Nitride ◽  
Silicon Nitride Films ◽  
Si Quantum Dots

Substrate Temperature Effects on Properties of Silicon Nitride Films Deposited by Ion Beam Assisted Deposition

1990 ◽  
Vol 201 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
K. S. Grabowski ◽  
W. D. Coleman
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Flux Ratio ◽  
Film Structure ◽  
Atom Fraction ◽  
Silicon Nitride Films

AbstractSilicon nitride films (Si1−x,.Nx) have been deposited on silicon by simultaneous evaporation of silicon and bombardment of nitrogen ions. Films approximately 1 μm thick were deposited in an ambient nitrogen pressure of 50 μTorr. The substrate temperature (TSUB) ranged from nominally room temperature to 950° C for films with X between 0 and 0.6. Nitrogen atom fraction, X, was measured with Rutherford backscattering spectrometry (RBS). Refractive index was measured with near-IR reflection spectroscopy. Differences in film structure were measured by FT1R on the Si-N bond bending absorption mode, and by x-ray diffraction (XRD). X was found to depend upon the incident flux ratio of energetic nitrogen atoms to vapor silicon, and upon TSUB. Refractive index depends upon X and TSUB. XRD found evidence of the presence of amorphous structure, poly-crystalline silicon and (101) oriented β-Si3N4 depending on X and TSUB. The Si-N absorption signal increases with X and shows some structure at high TSUB.

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