Effects of rapid thermal anneal on refractive index and hydrogen content of plasma‐enhanced chemical vapor deposited silicon nitride films

1996 ◽  
Vol 80 (9) ◽  
pp. 5384-5388 ◽  
Author(s):  
L. Cai ◽  
A. Rohatgi ◽  
D. Yang ◽  
M. A. El‐Sayed
Keyword(s):  
Refractive Index ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Chemical Vapor ◽  
Rapid Thermal Anneal ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited

Diffusion of hydrogen in low‐pressure chemical vapor deposited silicon nitride films

1990 ◽  
Vol 56 (25) ◽  
pp. 2530-2532 ◽  
Author(s):  
W. M. Arnold Bik ◽  
R. N. H. Linssen ◽  
F. H. P. M. Habraken ◽  
W. F. van der Weg ◽  
A. E. T. Kuiper
Keyword(s):  
Silicon Nitride ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Diffusion Of Hydrogen

Deposition of Fluorinated Silicon Nitride using Plasma Enhanced Chemical Vapor Deposition Technique

1991 ◽  
Vol 219 ◽  
Author(s):  
Ibrahim Khan ◽  
H. A. Naseem ◽  
S. S. Ang ◽  
W. D. Brown
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Electronic Devices ◽  
Chemical Vapor ◽  
Dielectric Strength ◽  
Optical And Electrical Properties ◽  
High Hydrogen ◽  
Optical Gap ◽  
Silicon Nitride Films ◽  
Vapor Deposition Technique

ABSTRACTHigh hydrogen content of ammonia/silane deposited silicon nitride films has been linked to instability in electronic devices such as MOSFET's MNOSFET's and TFT's. Fluorine has been proposed to help reduce the hydrogen content of these films. In this work, NF3 was used as a fluorinating agent. Optical and electrical properties were studied as a function of NF3 flow rate. A maximum optical gap of 5.3 eV was obtained with NF3 as compared to 3.2 eV without. The dielectric strength improved from 4 to 10 MV/cm with the addition of NF3. FTIR data show that the Si-N peak shifts to higher wave numbers and the Si-H peak drops below the detection limit with the addition of NF3. Also, the broad Si-N peak at 850 cm-1 is composed of many individual peaks which become discernable when a stainless steel screen is placed in front of the substrate. As the NF3 concentration is increased, a new peak at 1030–1060 cm-1 appears. This may be associated with a N-F vibration (1030 cm-1).

Positron annihilation study of low pressure chemical vapor deposited silicon nitride films

1991 ◽  
Vol 59 (14) ◽  
pp. 1687-1689 ◽  
Author(s):  
R. A. Hakvoort ◽  
H. Schut ◽  
A. van Veen ◽  
W. M. Arnold Bik ◽  
F. H. P. M. Habraken
Keyword(s):  
Silicon Nitride ◽  
Positron Annihilation ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Nitride Films ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Positron Annihilation Study

Effect of the hydrogen content in the optical properties and etching of silicon nitride films deposited by PECVD for uncooled microbolometers

2005 ◽  
Vol 862 ◽  
Author(s):  
R. Ambrosio ◽  
A. Torres ◽  
A. Kosarev ◽  
M. Landa ◽  
A. Heredia
Keyword(s):  
Hydrogen Bonding ◽  
Silicon Nitride ◽  
Hydrogen Content ◽  
Etch Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Quantitative Results ◽  
Deposited Films

AbstractWe have studied silicon nitride films a-SiN:H deposited at a substrate temperature of 350°C by means of the Low frequency (LF) PECVD from silane and nitrogen as stock gases. Film properties as hydrogen bonding and content, nitrogen content, refractive index and etch rate are reported and analyzed. Our deposited films show physical properties similar to those that are obtained deposition temperatures of 700°C by the low pressure chemical vapor deposition (LPCVD) technique. An investigation of bonding structures for the deposited films was performed, and quantitative results for hydrogen bonding based on Fourier Transform Infrared (FTIR) analysis are presented. It was observed that low hydrogen content in the films is in good correlation with low etch rate in 10% buffered HF solution, therefore these films present a material with good etch selectivity in respect to others materials (as phosphosilicate glass PSG, Al etc). Selectivity which makes these films very promising in surface micromachining for fabrication of sensors and device structures, e.g. microbolometers. Additionally, the Si-N bond at 830-840cm-1was analyzed because of its big absorption produced at 12μm; therefore these films can be used as absorber layers in uncooled microbolometres.

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