Iridium Electrodes for Ferroelectric Capacitors Deposited by Liquid-Delivery MOCVD and PVD

2019 ◽  
Vol 2 (7) ◽  
pp. 67-78 ◽  
Author(s):  
Marco Lisker ◽  
Yves Ritterhaus ◽  
Tetyana Hur'yeva ◽  
Edmund Burte
Keyword(s):  
Ferroelectric Capacitors ◽  
Liquid Delivery

Iridium Electrodes for Ferroelectric Capacitors Deposited by Liquid-Delivery MOCVD

2005 ◽  
Vol 902 ◽  
Author(s):  
Yves Ritterhaus ◽  
Tetyana Hur'yeva ◽  
Marco Lisker ◽  
Edmund Paul Burte
Keyword(s):  
Growth Rates ◽  
Electrode Material ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Random Access ◽  
Chemical Vapor ◽  
Oxygen Flow ◽  
Step Coverage ◽  
Ferroelectric Capacitors ◽  
Liquid Delivery

AbstractThin iridium films are required as electrode material for ferroelectric capacitors. SBT or PZT are often used as ferroelectric material in such capacitors. The PZT based non-volatile ferroelectric random access memories show better fatigue characteristics if platinum is replaced by iridium as electrode material. Metalorganic chemical vapor deposition (MOCVD) was used for the deposition because of the superior step coverage on three-dimensional structures compared to the conventional physical vapor deposition processes of metal layers. Particularly, in memory fabrication, good step coverage is essential. The iridium films were deposited on different substrates at temperatures of 300 – 500 °C by liquid-delivery MOCVD. The precursor Ir(EtCp)(1,5COD) [iridium(ethylcyclopentadienyl)(1,5-cyclooctadiene)] was diluted in toluene (0.1 M concentration) for the deposition experiments. The iridium films were deposited onto TiO2/SiO2/Si-, SiO2/Si-, and Si-substrates to compare the iridium film properties on different substrates. The growth conditions like oxygen flow, growth temperature, and reactor pressure were varied. The growth rates were in a range between 0.05 and 4.6 nm per minute. We found that the growth rates were highly influenced by the oxygen flow and the substrate material. Oxygen assisted the decomposition of the precursor, and carbon and hydrogen of the organic source were oxidized, which suppressed its incorporation into the iridium layer. Annealing in an oxidizing ambient at temperatures above 700 °C resulted in an increased oxidation of the films as proved by XRD analyses. The resistivity of the films was determined by the Van-der-Pauw method. Low resistivities of 7 – 70 µΩcm were obtained for the as-deposited iridium films.

Role of the Electrode Morphology, Thickness and Orientation in the Ferroelectric Performance of Epitaxial Pb(Zr,Ti)O3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Cesar Guerrero ◽  
Florencio Sánchez ◽  
José Roldán ◽  
Frank Güell ◽  
María V. García-Cuenca
Keyword(s):  
Electrode Materials ◽  
Stabilized Zirconia ◽  
Large Thickness ◽  
Low Dielectric ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Ferroelectric Layer ◽  
Ferroelectric Capacitors ◽  
Lattice Matched

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

scholarly journals A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 385
Author(s):  
Qiao Wang ◽  
Donglin Zhang ◽  
Yulin Zhao ◽  
Chao Liu ◽  
Qiao Hu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Reliability ◽  
Charge Sharing ◽  
Operation Speed ◽  
Sharing Function ◽  
Logic Operations ◽  
A Charge ◽  
Process Compatibility ◽  
Ferroelectric Capacitors

Ferroelectric capacitors (FeCAPs) with high process compatibility, high reliability, ultra-low programming current and fast operation speed are promising candidates to traditional volatile and nonvolatile memory. In addition, they have great potential in the fields of storage, computing, and memory logic. Nevertheless, effective methods to realize logic and memory in FeCAP devices are still lacking. This study proposes a 1T2C FeCAP-based in situ bitwise X(N)OR logic based on a charge-sharing function. First, using the 1T2C structure and a two-step write-back circuit, the nondestructive reading is realized with less complexity than the previous work. Second, a method of two-line activation is used during the operation of X(N)OR. The verification results show that the speed, area and power consumption of the proposed 1T2C FeCAP-based bitwise logic operations are significantly improved.

Negative capacitance in epitaxial ferroelectric capacitors evidenced by dynamic dielectric characterization

2021 ◽  
Vol 26 ◽  
pp. 102076
Author(s):  
Georgia Andra Boni ◽  
Cristina Chirila ◽  
Lucian Dragos Filip ◽  
Ioana Pintilie ◽  
Lucian Pintilie
Keyword(s):  
Negative Capacitance ◽  
Dielectric Characterization ◽  
Ferroelectric Capacitors

Low-volume liquid delivery and nanolithography using a nanopipette combined with a quartz tuning fork-atomic force microscope

Nanoscale ◽  
2012 ◽  
Vol 4 (20) ◽  
pp. 6493 ◽  
Author(s):  
Sangmin An ◽  
Corey Stambaugh ◽  
Gunn Kim ◽  
Manhee Lee ◽  
Yonghee Kim ◽  
...  
Keyword(s):  
Atomic Force Microscope ◽  
Tuning Fork ◽  
Quartz Tuning Fork ◽  
Atomic Force ◽  
Low Volume ◽  
Liquid Delivery

Fabrication of Pb(Zr,Ti)O 3 Thin Films by Liquid Delivery MOCVD Using a Cocktail Source with Pb(METHD) 2 , Zr(METHD) 4 and Ti(MPD)(METHD) 2

2003 ◽  
Vol 51 (1) ◽  
pp. 63-72 ◽  
Author(s):  
Yohei Otani ◽  
Norikazu Abe ◽  
Yoshiki Ueda ◽  
Masato Miyake ◽  
Soichiro Okamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Delivery

Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si

2007 ◽  
Vol 91 (14) ◽  
pp. 142908 ◽  
Author(s):  
B. T. Liu ◽  
X. B. Yan ◽  
X. Zhang ◽  
C. S. Cheng ◽  
F. Li ◽  
...  
Keyword(s):  
Barrier Performance ◽  
Ferroelectric Capacitors

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  
Keyword(s):  
Low Voltage ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors
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