Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si

2007 ◽  
Vol 91 (14) ◽  
pp. 142908 ◽  
Author(s):  
B. T. Liu ◽  
X. B. Yan ◽  
X. Zhang ◽  
C. S. Cheng ◽  
F. Li ◽  
...  
Keyword(s):  
Barrier Performance ◽  
Ferroelectric Capacitors

Approximate analysis of the containment of contaminated sites prior to remediation

2000 ◽  
Vol 42 (1-2) ◽  
pp. 319-324 ◽  
Author(s):  
H. Rubin ◽  
A. Rabideau
Keyword(s):  
Steady State ◽  
Peclet Number ◽  
Dimensionless Parameter ◽  
Contaminated Sites ◽  
Unsteady State ◽  
Péclet Number ◽  
Vertical Barrier ◽  
Time Period ◽  
Barrier Performance ◽  
Vertical Barriers

This study presents an approximate analytical model, which can be useful for the prediction and requirement of vertical barrier efficiencies. A previous study by the authors has indicated that a single dimensionless parameter determines the performance of a vertical barrier. This parameter is termed the barrier Peclet number. The evaluation of barrier performance concerns operation under steady state conditions, as well as estimates of unsteady state conditions and calculation of the time period requires arriving at steady state conditions. This study refers to high values of the barrier Peclet number. The modeling approach refers to the development of several types of boundary layers. Comparisons were made between simulation results of the present study and some analytical and numerical results. These comparisons indicate that the models developed in this study could be useful in the design and prediction of the performance of vertical barriers operating under conditions of high values of the barrier Peclet number.

Role of the Electrode Morphology, Thickness and Orientation in the Ferroelectric Performance of Epitaxial Pb(Zr,Ti)O3 Thin Films

2000 ◽  
Vol 655 ◽  
Author(s):  
Cesar Guerrero ◽  
Florencio Sánchez ◽  
José Roldán ◽  
Frank Güell ◽  
María V. García-Cuenca
Keyword(s):  
Electrode Materials ◽  
Stabilized Zirconia ◽  
Large Thickness ◽  
Low Dielectric ◽  
Thin Film Capacitors ◽  
Pzt Thin Film ◽  
Ferroelectric Layer ◽  
Ferroelectric Capacitors ◽  
Lattice Matched

AbstractA comparison of pulsed laser deposited PbZr0.53Ti0.47O3 (PZT) thin film capacitors with SrRuO3 (SRO) and LaNiO3 (LNO) electrodes on (001) yttria-stabilized zirconia (YSZ) and lattice matched (001) LaAlO3 substrates is presented. Both electrode materials allow for the formation of ferroelectric capacitors with large remnant polarization (20-30 μC/cm2) and negligible fatigue, although slight differences arise regarding the promotion of either the rhombohedral or tetragonal phases of PZT. Far more crucial seems to be the tendency of SrRuO3 to develop a rougher surface at either small (<30 nm) or large thickness (>100 nm), and on YSZ substrates. In those cases a highly defective and possibly low dielectric interface forms between the electrode and the ferroelectric layer, resulting in greatly degraded ferroelectric performance. LaNiO3 is free from these limitations except for the cracks forming at very large thickness (>300 nm), and therefore appears as a more versatile electrode material.

scholarly journals A 1T2C FeCAP-Based In-Situ Bitwise X(N)OR Logic Operation with Two-Step Write-Back Circuit for Accelerating Compute-In-Memory

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 385
Author(s):  
Qiao Wang ◽  
Donglin Zhang ◽  
Yulin Zhao ◽  
Chao Liu ◽  
Qiao Hu ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
High Reliability ◽  
Charge Sharing ◽  
Operation Speed ◽  
Sharing Function ◽  
Logic Operations ◽  
A Charge ◽  
Process Compatibility ◽  
Ferroelectric Capacitors

Ferroelectric capacitors (FeCAPs) with high process compatibility, high reliability, ultra-low programming current and fast operation speed are promising candidates to traditional volatile and nonvolatile memory. In addition, they have great potential in the fields of storage, computing, and memory logic. Nevertheless, effective methods to realize logic and memory in FeCAP devices are still lacking. This study proposes a 1T2C FeCAP-based in situ bitwise X(N)OR logic based on a charge-sharing function. First, using the 1T2C structure and a two-step write-back circuit, the nondestructive reading is realized with less complexity than the previous work. Second, a method of two-line activation is used during the operation of X(N)OR. The verification results show that the speed, area and power consumption of the proposed 1T2C FeCAP-based bitwise logic operations are significantly improved.

Negative capacitance in epitaxial ferroelectric capacitors evidenced by dynamic dielectric characterization

2021 ◽  
Vol 26 ◽  
pp. 102076
Author(s):  
Georgia Andra Boni ◽  
Cristina Chirila ◽  
Lucian Dragos Filip ◽  
Ioana Pintilie ◽  
Lucian Pintilie
Keyword(s):  
Negative Capacitance ◽  
Dielectric Characterization ◽  
Ferroelectric Capacitors

Lead based ferroelectric capacitors for low voltage non-volatile memory applications

1998 ◽  
Vol 19 (1-4) ◽  
pp. 159-177 ◽  
Author(s):  
S. Aggarwal ◽  
A. S. Prakash ◽  
T. K. Song ◽  
S. Sadashivan ◽  
A. M. Dhote ◽  
...  
Keyword(s):  
Low Voltage ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Memory Applications ◽  
Ferroelectric Capacitors
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