Reduced Gas Phase and Surface Kinetics for Silicon Carbide Epitaxial Growth

2019 ◽  
Vol 2 (7) ◽  
pp. 11-20 ◽  
Author(s):  
Maurizio Masi ◽  
Alessandro Veneroni
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Kinetics

A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor

1995 ◽  
Vol 142 (1) ◽  
pp. 259-266 ◽  
Author(s):  
M. Hierlemann ◽  
A. Kersch ◽  
C. Werner ◽  
H. Schäfer
Keyword(s):  
Epitaxial Growth ◽  
Gas Phase ◽  
Kinetics Model ◽  
Surface Kinetics

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

In Situ Optical Analysis of the Gas Phase during the Deposition of Silicon Carbide from Methyltrichlorosilane

1996 ◽  
Vol 143 (5) ◽  
pp. 1654-1661 ◽  
Author(s):  
M. Ganz ◽  
N. Dorval ◽  
M. Lefebvre ◽  
M. Péalat ◽  
F. Loumagne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Optical Analysis

The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

2015 ◽  
Vol 41 (5) ◽  
pp. 476-478 ◽  
Author(s):  
Yu. V. Zhilyaev ◽  
V. V. Zelenin ◽  
T. A. Orlova ◽  
V. N. Panteleev ◽  
N. K. Poletaev ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Gas Phase

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

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