Gas-Phase and Surface Kinetics of Epitaxial Silicon Carbide Growth Involving Chlorine-Containing Species

2006 ◽  
Vol 12 (8-9) ◽  
pp. 562-568 ◽  
Author(s):  
A. Veneroni ◽  
M. Masi
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Epitaxial Silicon ◽  
Surface Kinetics ◽  
Kinetics Of

Kinetics of Gas-Phase Chemical Reactions and Growth of a-SiC:H Films from Silane and Acetylene in a Remote Hydrogen Plasma Reactor

1991 ◽  
Vol 219 ◽  
Author(s):  
N. M. Johnson ◽  
Paulo V. Santos ◽  
J. Walker ◽  
K. S. Stevens
Keyword(s):  
Silicon Carbide ◽  
Electron Spin Resonance ◽  
Gas Phase ◽  
Chemical Reactions ◽  
Electron Spin ◽  
Plasma Reactor ◽  
Hydrogen Plasma ◽  
Spin Resonance ◽  
Kinetics Of ◽  
Phase Chemical

ABSTRACTGas-phase chemical reactions of interest for the deposition of amorphous silicon carbide in a remote hydrogen plasma reactor have been quantitatively characterized with electron spin resonance, and the deposition of a-SiC:H from silane and acetylene is demonstrated.

Gas Phase and Gas Surface Kinetics of Transient Silicoin Hydride Species

1993 ◽  
Vol 334 ◽  
Author(s):  
Joseph M. Jasinski
Keyword(s):  
Thin Films ◽  
Gas Phase ◽  
Silicon Hydride ◽  
Surface Kinetics ◽  
Current State ◽  
The Absolute ◽  
Kinetics Of

AbstractThis paper presents a summary of the current state of our understanding of the absolute reactivity of transient silicon hydride species, such as SiH, SiH2and SiH3in the gas phase and at the surface of thin films.

Interaction of gas‐phase atomic deuterium with the Ru(001)–p(1×2)–O surface: Kinetics of hydroxyl and water formation

1996 ◽  
Vol 104 (19) ◽  
pp. 7713-7718 ◽  
Author(s):  
M. Schick ◽  
J. Xie ◽  
W. J. Mitchell ◽  
W. H. Weinberg
Keyword(s):  
Gas Phase ◽  
Surface Kinetics ◽  
Water Formation ◽  
Kinetics Of

Kinetic study of silicon carbide deposited from methyltrichlorosilane precursor

1994 ◽  
Vol 9 (1) ◽  
pp. 104-111 ◽  
Author(s):  
Ching Yi Tsai ◽  
Seshu B. Desu ◽  
Chien C. Chiu
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Present Model ◽  
Equilibrium Constants ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Reaction Scheme ◽  
Phase Decomposition ◽  
Reaction Constants ◽  
Kinetics Of

The kinetics of silicon carbide (SiC) deposition, in a hot-wall chemical vapor deposition (CVD) reactor, were modeled by analyzing our own deposition rate data as well as reported results. In contrast to the previous attempts which used only the first order lumped reaction scheme, the present model incorporates both homogeneous gas phase and heterogeneous surface reactions. The SiC deposition process was modeled using the following reactions: (i) gas phase decomposition of methyltrichlorosilane (MTS) molecules into two major intermediates, one containing silicon and the other containing carbon, (ii) adsorption of the intermediates onto the surface sites of the growing film, and (iii) reaction of the adsorbed intermediates to form silicon carbide. The equilibrium constant for the gas phase decomposition process was divided into the forward and backward reaction constants as 2.0 × 1025 exp[(448.2 kJ/mol)/RT] and 1.1 × 1032 exp[(-416.2 kJ/mol)/RT], respectively. Equilibrium constants for the surface adsorption reactions of silicon-carrying and carbon-carrying intermediates are 0.5 × 1011 exp[(-21.6 kJ/mol)/RT] and 7.1 × 109 exp[(-33.1 kJ/mol)/RT], while the rate constant for the surface reaction of the intermediates is 4.6 × 105 exp[(-265.1 kJ/mol)/RT].

Reduced Gas Phase and Surface Kinetics for Silicon Carbide Epitaxial Growth

2019 ◽  
Vol 2 (7) ◽  
pp. 11-20 ◽  
Author(s):  
Maurizio Masi ◽  
Alessandro Veneroni
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Kinetics

Irradiation behavior of pyrolytic silicon carbide

1983 ◽  
Vol 41 ◽  
pp. 72-73
Author(s):  
R. J. Lauf
Keyword(s):  
Silicon Carbide ◽  
Fission Products ◽  
Thermodynamics And Kinetics ◽  
Neutron Fluences ◽  
Fuel Particles ◽  
Sic Coatings ◽  
Irradiation Behavior ◽  
Kinetics Of ◽  
Htgr Fuel

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide to act as a miniature pressure vessel and primary fission product barrier. Optimization of the SiC with respect to fuel performance involves four areas of study: (a) characterization of as-deposited SiC coatings; (b) thermodynamics and kinetics of chemical reactions between SiC and fission products; (c) irradiation behavior of SiC in the absence of fission products; and (d) combined effects of irradiation and fission products. This paper reports the behavior of SiC deposited on inert microspheres and irradiated to fast neutron fluences typical of HTGR fuel at end-of-life.

Atomistic Simulation Study of Controlled Nanostructure Patterning

2003 ◽  
Vol 775 ◽  
Author(s):  
Byeongchan Lee ◽  
Kyeongjae Cho
Keyword(s):  
Diffusion Barrier ◽  
Atomistic Simulation ◽  
Degrees Of Freedom ◽  
Embedded Atom Method ◽  
Surface Kinetics ◽  
Bulk Properties ◽  
Embedded Atom ◽  
Kinetics Of ◽  
Dissociation Barrier ◽  
Strain Dependent

AbstractWe investigate the surface kinetics of Pt using the extended embedded-atom method, an extension of the embedded-atom method with additional degrees of freedom to include the nonbulk data from lower-coordinated systems as well as the bulk properties. The surface energies of the clean Pt (111) and Pt (100) surfaces are found to be 0.13 eV and 0.147 eV respectively, in excellent agreement with experiment. The Pt on Pt (111) adatom diffusion barrier is found to be 0.38 eV and predicted to be strongly strain-dependent, indicating that, in the compressive domain, adatoms are unstable and the diffusion barrier is lower; the nucleation occurs in the tensile domain. In addition, the dissociation barrier from the dimer configuration is found to be 0.82 eV. Therefore, we expect that atoms, once coalesced, are unlikely to dissociate into single adatoms. This essentially tells that by changing the applied strain, we can control the patterning of nanostructures on the metal surface.

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