A Gas‐Phase and Surface Kinetics Model for Silicon Epitaxial Growth with SiH2Cl2 in an RTCVD Reactor

1995 ◽  
Vol 142 (1) ◽  
pp. 259-266 ◽  
Author(s):  
M. Hierlemann ◽  
A. Kersch ◽  
C. Werner ◽  
H. Schäfer
Keyword(s):  
Epitaxial Growth ◽  
Gas Phase ◽  
Kinetics Model ◽  
Surface Kinetics

Reduced Gas Phase and Surface Kinetics for Silicon Carbide Epitaxial Growth

2019 ◽  
Vol 2 (7) ◽  
pp. 11-20 ◽  
Author(s):  
Maurizio Masi ◽  
Alessandro Veneroni
Keyword(s):  
Silicon Carbide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Kinetics

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

2015 ◽  
Vol 41 (5) ◽  
pp. 476-478 ◽  
Author(s):  
Yu. V. Zhilyaev ◽  
V. V. Zelenin ◽  
T. A. Orlova ◽  
V. N. Panteleev ◽  
N. K. Poletaev ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Epitaxial Growth ◽  
Gas Phase

Influence of interface dislocations on surface kinetics during epitaxial growth of InGaAs

1998 ◽  
Vol 123-124 ◽  
pp. 303-307 ◽  
Author(s):  
A.L. Álvarez ◽  
F. Calle ◽  
J.F. Valtuen˜a ◽  
J. Faura ◽  
M.A. Sánchez ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Surface Kinetics

Mechanisms of Molecular Beam Epitaxial Growth on Reconstructed Si{100}: Thermal and Energized Beams

1988 ◽  
Vol 141 ◽  
Author(s):  
B. J. Garrison ◽  
M. T. Miller ◽  
D.W. Brenner
Keyword(s):  
Molecular Dynamics ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Molecular Beam ◽  
Energy Deposition ◽  
Amorphous Structure ◽  
Molecular Beam Epitaxial ◽  
Dynamics Simulations ◽  
Molecular Beam Epitaxial Growth

Summary:Molecular dynamics simulations have been performed that examine the microscopic mechanisms of rearrangements of atoms on the Si{ 1001 surface due to deposition of gas phase atoms. For thermal energy deposition we find that the gas atoms initially attach to dangling bonds of the surface dimer atoms. The dimer ’unreconstruction’ is due to a diffusion event on the surface, thus is temperature activated. We also find that dimers may open in regions of the surface where there are several atoms not at lattice sites, thus a low temperature amorphous structure. For 5-10 eV deposition there are direct mechanisms of dimer opening that occur on the 50-100 fs timescale. For energies greater than 15-20 eV there is implantation of the silicon atoms which leads to subsurface damage.

Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics

2010 ◽  
Vol 645-648 ◽  
pp. 539-542 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Andrea Canino ◽  
Francesco La Via
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Physical Mechanism ◽  
Single Layer ◽  
Perfect Crystal ◽  
Crystallographic Structure ◽  
Extended Defects ◽  
Surface Kinetics ◽  
Layer Stacking

In this article, using Kinetic Monte simulations on super-lattices, we study the evolution of extended defects during epitaxial growth. Specifically we show that, in the case of misoriented, close-packed substrates, a single-layer stacking fault can either extend throughout the entire epilayer (i.e. extended from the substrate up to the surface) or close in a dislocation loop depending on the deposition conditions and the crystallographic structure of the exposed surface containing the defect. We explain this behaviour in terms of a surface kinetic competition between the defect and the surrounding, perfect crystal: if the growth rate of the defect is higher compared to the growth rate of the surrounding crystal the defect will expand, otherwise it will close. This physical mechanism allows us to explain several experimental results of homo- and heteroepitaxy.

Global potential energy surface and product pair-correlated distributions for the F(2P) + SiH4 reaction. Comparison with experiments.

2022 ◽  
Author(s):  
J. Espinosa-Garcia
Keyword(s):  
Potential Energy ◽  
Potential Energy Surface ◽  
Gas Phase ◽  
Energy Surface ◽  
Hydrogen Abstraction ◽  
Surface Kinetics ◽  
Abstraction Reaction ◽  
Kinetics And Dynamics ◽  
Hydrogen Abstraction Reaction ◽  
Product Pair

In this paper we study the gas-phase hydrogen abstraction reaction between fluorine atoms and silane in a three-step process: potential energy surface, kinetics and dynamics. Firstly, we developed for the...

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