Oxygen Plasma and Warm Nitric Acid Surface Activation for Low-Temperature Wafer Bonding

2006 ◽  
Vol 153 (12) ◽  
pp. G1099 ◽  
Author(s):  
Xuanxiong Zhang ◽  
Benoit Olbrechts ◽  
Jean-Pierre Raskin
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Oxygen Plasma ◽  
Surface Activation

scholarly journals A Simple Low-Temperature Glass Bonding Process with Surface Activation by Oxygen Plasma for Micro/Nanofluidic Devices

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 804
Author(s):  
Koki Shoda ◽  
Minori Tanaka ◽  
Kensuke Mino ◽  
Yutaka Kazoe
Keyword(s):  
Low Temperature ◽  
Silica Glass ◽  
Oxygen Plasma ◽  
Substrate Surface ◽  
Fused Silica ◽  
Bonding Energy ◽  
Surface Activation ◽  
Glass Substrates ◽  
Nanofluidic Devices ◽  
Fused Silica Glass

The bonding of glass substrates is necessary when constructing micro/nanofluidic devices for sealing micro- and nanochannels. Recently, a low-temperature glass bonding method utilizing surface activation with plasma was developed to realize micro/nanofluidic devices for various applications, but it still has issues for general use. Here, we propose a simple process of low-temperature glass bonding utilizing typical facilities available in clean rooms and applied it to the fabrication of micro/nanofluidic devices made of different glasses. In the process, the substrate surface was activated with oxygen plasma, and the glass substrates were placed in contact in a class ISO 5 clean room. The pre-bonded substrates were heated for annealing. We found an optimal concentration of oxygen plasma and achieved a bonding energy of 0.33–0.48 J/m2 in fused-silica/fused-silica glass bonding. The process was applied to the bonding of fused-silica glass and borosilicate glass, which is generally used in optical microscopy, and revealed higher bonding energy than fused-silica/fused-silica glass bonding. An annealing temperature lower than 200 °C was necessary to avoid crack generation by thermal stress due to the different thermal properties of the glasses. A fabricated micro/nanofluidic device exhibited a pressure resistance higher than 600 kPa. This work will contribute to the advancement of micro/nanofluidics.

The Buried Oxide Properties in Oxygen Plasma-Enhanced Low-Temperature Wafer Bonding

2000 ◽  
Vol 147 (7) ◽  
pp. 2754 ◽  
Author(s):  
Y. H. Wu ◽  
C. H. Huang ◽  
W. J. Chen ◽  
C. N. Lin ◽  
Albert Chin
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Oxygen Plasma ◽  
Buried Oxide

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas
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