Low temperature epitaxial layer transferring using oxygen plasma wafer bonding

2002 ◽  
Author(s):  
D. Pasquariello ◽  
M. Camacho ◽  
K. Hjort
Keyword(s):  
Low Temperature ◽  
Epitaxial Layer ◽  
Wafer Bonding ◽  
Oxygen Plasma

Oxygen Plasma and Warm Nitric Acid Surface Activation for Low-Temperature Wafer Bonding

2006 ◽  
Vol 153 (12) ◽  
pp. G1099 ◽  
Author(s):  
Xuanxiong Zhang ◽  
Benoit Olbrechts ◽  
Jean-Pierre Raskin
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Wafer Bonding ◽  
Oxygen Plasma ◽  
Surface Activation

The Buried Oxide Properties in Oxygen Plasma-Enhanced Low-Temperature Wafer Bonding

2000 ◽  
Vol 147 (7) ◽  
pp. 2754 ◽  
Author(s):  
Y. H. Wu ◽  
C. H. Huang ◽  
W. J. Chen ◽  
C. N. Lin ◽  
Albert Chin
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Oxygen Plasma ◽  
Buried Oxide

High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

2016 ◽  
Vol 75 (9) ◽  
pp. 345-353 ◽  
Author(s):  
F. Kurz ◽  
T. Plach ◽  
J. Suss ◽  
T. Wagenleitner ◽  
D. Zinner ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Precision ◽  
Wafer Bonding ◽  
Wafer Level ◽  
3D Ics ◽  
Direct Wafer Bonding ◽  
Bonding Technology

Low temperature GaAs/Si direct wafer bonding

2000 ◽  
Vol 36 (7) ◽  
pp. 677 ◽  
Author(s):  
M. Alexe ◽  
V. Dragoi ◽  
M. Reiche ◽  
U. Gösele
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Direct Wafer Bonding ◽  
Low Temperature Gaas

Low Temperature Silicon Oxidation With Electron Cyclotron Resonance Oxygen Plasma

1991 ◽  
Vol 235 ◽  
Author(s):  
K. T. Sung ◽  
S. W. Pang
Keyword(s):  
Low Temperature ◽  
Microwave Power ◽  
Cyclotron Resonance ◽  
Oxygen Plasma ◽  
Permanent Magnets ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Rf Power ◽  
Source Distance ◽  
Ecr Source

ABSTRACTSilicon was oxidized at low temperature with an oxygen plasma generated by an electron cyclotron resonance (ECR) source. The ECR source utilized a multicusp magnetic field formed by permanent magnets. Microwave power at 2.45 GHz was applied to the source and if power at 13.56 MHz was applied to the sample stage. Si oxidation was studied as a function of source distance, pressure, microwave power, and rf power. The oxide thickness increases with microwave and rf power but decreases with source distance. The oxidation rate increases with pressure up to 12 mTorr, men decreases at higher pressure. The relative emission intensities in the plasma monitored using optical emission spectroscopy showed similar dependence on the source distance and microwave power. Oxidation temperature was estimated to be <100°C. Using ellipsometry and X-ray photoelectron spectroscopy, the oxidized films were found to be close to that of thermal oxide with refractive index at 1.45 and oxygen to silicon ratio of 2. From the current-voltage and capacitance-voltage measurements, the breakdown fields of these oxide films were 6.3 MV/cm and the fixed charge densities were 7×1010 cm−2.

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Low Temperature Wafer Bonding: Plasma Assisted Silicon Direct Bonding vs. Silicon-Gold Eutectic Bonding

2019 ◽  
Vol 16 (8) ◽  
pp. 499-506 ◽  
Author(s):  
Martin Rabold ◽  
Holger Kuster ◽  
Peter Woias ◽  
Frank Goldschmidtboeing
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Eutectic Bonding

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

Low Temperature Direct Silicon Wafer Bonding Using Argon Activation

1997 ◽  
Vol 36 (Part 2, No. 5A) ◽  
pp. L527-L528 ◽  
Author(s):  
Robert W. Bower ◽  
Frank Y.-J. Chin
Keyword(s):  
Low Temperature ◽  
Silicon Wafer ◽  
Wafer Bonding
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