A Top Surface Imaging Method Using Area Selective ALD on Chemically Amplified Polymer Photoresist Films

2006 ◽  
Vol 9 (11) ◽  
pp. G330 ◽  
Author(s):  
Ashwini Sinha ◽  
Dennis W. Hess ◽  
Clifford L. Henderson
Keyword(s):  
Imaging Method ◽  
Surface Imaging ◽  
Chemically Amplified ◽  
Top Surface Imaging

scholarly journals Study of high photo-speed top surface imaging process using chemically amplified resist.

1998 ◽  
Vol 11 (4) ◽  
pp. 613-618
Author(s):  
Shigeyasu Mori ◽  
Nobuyuki Matsuzawa ◽  
Yuko Kaimoto ◽  
Masayuki Endo ◽  
Takahiro Matsuo ◽  
...  
Keyword(s):  
Surface Imaging ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Top Surface Imaging

Non-chemically amplified 193-nm top surface imaging photoresist development: polymer substituent and polydispersity effects

1999 ◽  
Author(s):  
Myoung-Soo Kim ◽  
Hyoung-Gi Kim ◽  
Hyeong-Soo Kim ◽  
Ki-Ho Baik ◽  
Donald W. Johnson ◽  
...  
Keyword(s):  
Surface Imaging ◽  
Chemically Amplified ◽  
Top Surface Imaging ◽  
193 Nm

A Study of the O2-SO2Plasma Etch Chemistry for Top Surface Imaging Photoresist Dry Development

1998 ◽  
Vol 37 (Part 1, No. 4B) ◽  
pp. 2373-2380 ◽  
Author(s):  
Z. S. Huang ◽  
Yosias Melaku ◽  
Wendy Nguyen
Keyword(s):  
Surface Imaging ◽  
Top Surface Imaging

Novel Approaches to Nanopatterning: From Surface Monolayer Initiated Polymerization to Hybrid Organometallic-Organic Bilayers

2001 ◽  
Vol 705 ◽  
Author(s):  
Clifford L. Henderson ◽  
Sean Barstow ◽  
Augustin Jeyakumar ◽  
Kendra McCoy ◽  
Dennis W. Hess ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
Polymeric Materials ◽  
Polymerization Process ◽  
Precursor Film ◽  
Imaging Method ◽  
Surface Imaging ◽  
Imaging Methods ◽  
Organometallic Precursor

AbstractThe extendability of conventional subtractive lithographic processing using spin-coated polymeric single layer resists (SLR) faces many challenges as feature sizes in microelectronics push below 100 nm. In addition, the opacity of the polymeric materials traditionally used as SLR resins to future exposure sources presents new challenges as the radiation penetration depth decreases (e.g. 157 nm, EUVL, low keV e-beam). One solution to these problems is the use of surface imaging materials and processes. In such surface imaging methods, exposure in only a thin surface layer is used to create a pattern in a substantially thicker etch barrier layer. Conventional surface imaging approaches have mainly focused on silylation techniques which have experienced a variety of problems. This paper presents an update on two novel surface imaging methods under investigation: (1) surface monolayer initiated polymerization (SMIP) and (2) organometallic-organic bilayer resists.The SMIP process involves using a monolayer that contains a polymerization initiator functionality. Exposure of the monolayer to radiation can deactivate the initiators in selected areas and the remaining initiators can subsequently be used to directly grow patterned polymer structures. This process allows complete decoupling of the imaging properties of the monolayer from the etch properties of the polymer etch barrier. In essence, the polymerization process is used to amplify the pattern initially formed in the monolayer. Recent results are presented that demonstrate the use of x-ray photoelectron spectroscopy in conjunction with dose array experiments to analyze the sensitivity of the initiators used for this process.The other novel surface imaging method presented in this work uses organometallic-organic bilayers. In these systems, thin films of radiation sensitive organometallic precursors are used as an imaging layer in conjunction with thick organic etch barrier layers. Upon exposure, the organometallic precursor film is selectively converted to metal oxide. After exposure, the unexposed regions of the film can be developed away. Subsequent dry pattern transfer in an oxygen plasma can be used to transfer the pattern defined in the thin oxide layer through the organic etch barrier layer. Organometallic precursor films with sensitivities on the order of 70 μC/cm2 are demonstrated which result in oxide films that possess an etch selectivity of 100:1 with respect to novolac in oxygen plasmas. 500 nm line-space patterns are demonstrated as a first lithographic imaging proof-of-concept.

Top-Surface Imaging Using Selective Electroless Metallization of Patterned Monolayer Films

1993 ◽  
pp. 210-219 ◽  
Author(s):  
J. M. Calvert ◽  
W. J. Dressick ◽  
C. S. Dulcey ◽  
M. S. Chen ◽  
J. H. Georger ◽  
...  
Keyword(s):  
Surface Imaging ◽  
Monolayer Films ◽  
Electroless Metallization ◽  
Top Surface Imaging

Using alicyclic polymers in top surface imaging systems to reduce line-edge roughness

2000 ◽  
Author(s):  
Mark H. Somervell ◽  
David S. Fryer ◽  
Brian Osborn ◽  
Kyle Patterson ◽  
Sungseo Cho ◽  
...  
Keyword(s):  
Imaging Systems ◽  
Surface Imaging ◽  
Line Edge Roughness ◽  
Edge Roughness ◽  
Top Surface Imaging
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